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Transistors / Power Field-Effect Transistors / STN1NB80
Datasheets
STN1NB80 by: STMicroelectronics

0.2A, 800V, 20ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN

Part Details for STN1NB80 by STMicroelectronics

Results Overview of STN1NB80 by STMicroelectronics

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Security and Surveillance Environmental Monitoring Internet of Things (IoT) Space Technology Smart Cities Aerospace and Defense Healthcare Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Robotics and Drones

STN1NB80 Information

STN1NB80 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STN1NB80

Part # Distributor Description Stock Price Buy
ComSIT USA Electronic Component RoHS: Not Compliant Stock DE - 0
Stock ES - 146193
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for STN1NB80

STN1NB80 CAD Models

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STN1NB80 Part Data Attributes

Parametric Data
STN1NB80 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STN1NB80 STMicroelectronics 0.2A, 800V, 20ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code SOT-223
Package Description SOT-223, 4 PIN
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 200 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 0.2 A
Drain-source On Resistance-Max 20 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.9 W
Pulsed Drain Current-Max (IDM) 0.8 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STN1NB80

This table gives cross-reference parts and alternative options found for STN1NB80. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STN1NB80, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FDT457N onsemi Check for Price N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 60mΩ, SOT-223-4 / TO-261-4, 4000-REEL STN1NB80 vs FDT457N
STN2NF06 STMicroelectronics Check for Price 2A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN STN1NB80 vs STN2NF06
STE45N50 STMicroelectronics Check for Price 0.11ohm, Si, POWER, FET, POWER, ISOTOP-4 STN1NB80 vs STE45N50
STN3NE06L STMicroelectronics Check for Price 3A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN STN1NB80 vs STN3NE06L
STE26N50 STMicroelectronics Check for Price 26A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, POWER, ISOTOP-4 STN1NB80 vs STE26N50
STN4NF06L STMicroelectronics $0.5749 Automotive-grade N-channel 60 V, 0.07 Ohm typ., 4 A STripFET II Power MOSFET in SOT-223 package STN1NB80 vs STN4NF06L
FDT457N_NL Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 5A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET STN1NB80 vs FDT457N_NL
FDT459N Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 6.5A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET STN1NB80 vs FDT459N
APT39M60J Microsemi Corporation Check for Price Power Field-Effect Transistor, 42A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOTOP-4 STN1NB80 vs APT39M60J
STN2NE10 STMicroelectronics Check for Price 2A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN STN1NB80 vs STN2NE10

STN1NB80 Related Parts

STN1NB80 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the STN1NB80 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within the -40°C to 125°C range for optimal performance and reliability.

  • To ensure proper biasing, follow the recommended operating conditions in the datasheet, including the voltage supply range (VCC) and the input voltage range (VIN). Additionally, ensure that the input signals are within the specified voltage range and that the output is properly terminated.

  • For optimal thermal management, it's recommended to use a thermal pad on the bottom of the package and to ensure good thermal conductivity between the device and the PCB. A recommended PCB layout is provided in the datasheet, which includes guidelines for trace width, spacing, and via placement.

  • The STN1NB80 has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. This includes using ESD-safe materials, grounding straps, and ionizers to minimize the risk of ESD damage.

  • The datasheet provides recommended test and measurement procedures, including setup and configuration guidelines for oscilloscopes, signal generators, and other test equipment. It's essential to follow these guidelines to ensure accurate and reliable measurements.