Part Details for STN1NB80 by STMicroelectronics
Overview of STN1NB80 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Security and Surveillance
Environmental Monitoring
Internet of Things (IoT)
Space Technology
Smart Cities
Aerospace and Defense
Healthcare
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Robotics and Drones
Part Details for STN1NB80
STN1NB80 CAD Models
STN1NB80 Part Data Attributes
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STN1NB80
STMicroelectronics
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Datasheet
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STN1NB80
STMicroelectronics
0.2A, 800V, 20ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | SOT-223 | |
| Package Description | SOT-223, 4 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 0.2 A | |
| Drain-source On Resistance-Max | 20 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.9 W | |
| Pulsed Drain Current-Max (IDM) | 0.8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STN1NB80
This table gives cross-reference parts and alternative options found for STN1NB80. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STN1NB80, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STN4NF06L | Automotive-grade N-channel 60 V, 0.07 Ohm typ., 4 A STripFET II Power MOSFET in SOT-223 package | STMicroelectronics | STN1NB80 vs STN4NF06L |
| STN2NF06 | 2A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN | STMicroelectronics | STN1NB80 vs STN2NF06 |
| STE45N50 | 0.11ohm, Si, POWER, FET, POWER, ISOTOP-4 | STMicroelectronics | STN1NB80 vs STE45N50 |
| FDT459N | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | STN1NB80 vs FDT459N |
| FDT459N | N-Channel Enhancement Mode Field Effect Transistor 30V, 6.5A, 35mΩ, 4000-REEL | onsemi | STN1NB80 vs FDT459N |
| FDT459N_NL | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | STN1NB80 vs FDT459N_NL |
| STN4NF03L | N-Channel 30V - 0.039 Ohm - 4A - SOT-223 STripFET(TM) POWER MOSFET | STMicroelectronics | STN1NB80 vs STN4NF03L |
| STE36N50 | 36A, 500V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, POWER, ISOTOP-4 | STMicroelectronics | STN1NB80 vs STE36N50 |
| STN2NE06 | 2A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN | STMicroelectronics | STN1NB80 vs STN2NE06 |