Datasheets
STL26NM60N by: STMicroelectronics

N-channel 600 V, 0.160 Ohm typ., 19 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 8x8 HV package

Part Details for STL26NM60N by STMicroelectronics

Overview of STL26NM60N by STMicroelectronics

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for STL26NM60N

Part # Distributor Description Stock Price Buy
DISTI # 47T9318
Newark Mosfet, N Ch, 600V, 19A, Powerflat, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:19A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STL26NM60N Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
DISTI # 497-STL26NM60NCT-ND
DigiKey MOSFET N-CH 600V 19A POWERFLAT Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 2463
In Stock
  • 1 $5.0300
  • 10 $4.2230
  • 100 $3.4164
  • 500 $3.0368
  • 1,000 $2.6002
  • 3,000 $2.4484
$2.4484 / $5.0300 Buy Now
DISTI # STL26NM60N
Avnet Americas Trans MOSFET N-CH 600V 19A 4-Pin Power Flat T/R - Tape and Reel (Alt: STL26NM60N) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 3,000 $2.7342
  • 6,000 $2.6779
  • 12,000 $2.6215
$2.6215 / $2.7342 Buy Now
DISTI # 511-STL26NM60N
Mouser Electronics MOSFET N-Ch 600V 0.160 Ohm 19A HV Mdmesh II RoHS: Compliant 2243
  • 1 $5.0300
  • 10 $4.2200
  • 25 $3.9900
  • 100 $3.4200
  • 250 $3.2300
  • 500 $3.0400
  • 1,000 $2.6000
  • 3,000 $2.4400
$2.4400 / $5.0300 Buy Now
STMicroelectronics N-channel 600 V, 0.160 Ohm typ., 19 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 8x8 HV package RoHS: Compliant Min Qty: 1 2243
  • 1 $4.9300
  • 10 $4.1400
  • 25 $3.9100
  • 100 $3.3500
  • 250 $3.1700
  • 500 $2.9800
$2.9800 / $4.9300 Buy Now
Future Electronics N-channel 600 V 185 mOhm MDmesh™ II Power MosFet - PowerFLAT RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 3000
Reel
  • 3,000 $2.4000
$2.4000 Buy Now
Future Electronics N-channel 600 V 185 mOhm MDmesh™ II Power MosFet - PowerFLAT RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $2.4000
$2.4000 Buy Now
Future Electronics N-channel 600 V 185 mOhm MDmesh™ II Power MosFet - PowerFLAT RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $2.4000
$2.4000 Buy Now
DISTI # STL26NM60N
TME Transistor: N-MOSFET, unipolar Min Qty: 1 0
  • 1 $3.1800
  • 10 $2.8700
  • 100 $2.5300
  • 500 $2.2700
  • 1,000 $2.0500
  • 3,000 $1.8900
  • 6,000 $1.8100
$1.8100 / $3.1800 RFQ
DISTI # STL26NM60N
Avnet Silica Trans MOSFET N-CH 600V 19A 4-Pin Power Flat T/R (Alt: STL26NM60N) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now
DISTI # STL26NM60N
EBV Elektronik Trans MOSFET N-CH 600V 19A 4-Pin Power Flat T/R (Alt: STL26NM60N) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STL26NM60N

STL26NM60N CAD Models

STL26NM60N Part Data Attributes:

STL26NM60N STMicroelectronics
Buy Now Datasheet
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STL26NM60N STMicroelectronics N-channel 600 V, 0.160 Ohm typ., 19 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 8x8 HV package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Package Description 8 X 8 MM, ROHS COMPLIANT, POWERFLAT-5
Pin Count 5
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 400 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 2.7 A
Drain-source On Resistance-Max 0.185 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N5
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 10.8 A
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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