Datasheets
STL13NM60N by: STMicroelectronics

N-channel 600 V, 0.320 Ohm typ., 10 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 8x8 HV package

Part Details for STL13NM60N by STMicroelectronics

Overview of STL13NM60N by STMicroelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Automotive

Price & Stock for STL13NM60N

Part # Distributor Description Stock Price Buy
DISTI # 59T6678
Newark Mosfet, N Ch, 600V, 10A, Powerflat, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:10A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STL13NM60N Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
DISTI # 497-11845-1-ND
DigiKey MOSFET N-CH 600V 10A PWRFLAT HV Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 2816
In Stock
  • 1 $3.2900
  • 10 $2.7640
  • 100 $2.2361
  • 500 $1.9877
  • 1,000 $1.7020
  • 3,000 $1.2158
  • 6,000 $1.1701
$1.1701 / $3.2900 Buy Now
DISTI # STL13NM60N
Avnet Americas Trans MOSFET N-CH 600V 10A 4-Pin Power Flat T/R - Tape and Reel (Alt: STL13NM60N) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel 3000
  • 3,000 $1.3169
  • 6,000 $1.2898
  • 12,000 $1.2626
$1.2626 / $1.3169 Buy Now
DISTI # 511-STL13NM60N
Mouser Electronics MOSFET N-channel 600 V 0.3 20 Ohm 10A MDmesh II RoHS: Compliant 2431
  • 1 $2.7000
  • 10 $2.2400
  • 100 $1.7900
  • 250 $1.6500
  • 500 $1.5000
  • 1,000 $1.2800
  • 3,000 $1.2100
  • 6,000 $1.1600
$1.1600 / $2.7000 Buy Now
STMicroelectronics N-channel 600 V, 0.320 Ohm typ., 10 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 8x8 HV package RoHS: Compliant Min Qty: 1 2431
  • 1 $2.6500
  • 10 $2.2000
  • 100 $1.7500
  • 250 $1.6200
  • 500 $1.4700
$1.4700 / $2.6500 Buy Now
Future Electronics N-Channel 600 V 0.385 Ohm MDmesh II Power MosFet - PowerFLAT RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $1.1900
$1.1900 Buy Now
Future Electronics N-Channel 600 V 0.385 Ohm MDmesh II Power MosFet - PowerFLAT RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $1.1900
$1.1900 Buy Now
Future Electronics N-Channel 600 V 0.385 Ohm MDmesh II Power MosFet - PowerFLAT RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $1.1900
$1.1900 Buy Now
Bristol Electronics   1950
RFQ
Quest Components   1560
  • 1 $3.7120
  • 350 $1.5312
  • 654 $1.3920
$1.3920 / $3.7120 Buy Now
ComSIT USA 600 V, 0.320 OHM, 10 A POWERFLAT N-CHANNEL (8X8) HV MDMESH II POWER MOSFET Power Field-Effect Transistor, 1.9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Europe - 3000
RFQ
DISTI # STL13NM60N
Avnet Silica Trans MOSFET N-CH 600V 10A 4-Pin Power Flat T/R (Alt: STL13NM60N) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now
DISTI # STL13NM60N
EBV Elektronik Trans MOSFET N-CH 600V 10A 4-Pin Power Flat T/R (Alt: STL13NM60N) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STL13NM60N

STL13NM60N CAD Models

STL13NM60N Part Data Attributes:

STL13NM60N STMicroelectronics
Buy Now Datasheet
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STL13NM60N STMicroelectronics N-channel 600 V, 0.320 Ohm typ., 10 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 8x8 HV package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Package Description 8 X 8 MM, ROHS COMPLIANT, POWER FLAT-5
Pin Count 5
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 93 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 1.9 A
Drain-source On Resistance-Max 0.385 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N5
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 7.6 A
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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