-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for STI47N60DM6AG by STMicroelectronics
Overview of STI47N60DM6AG by STMicroelectronics
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for STI47N60DM6AG
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
78AH2265
|
Newark | Mosfet, N-Ch, 600V, 36A, I2Pak Rohs Compliant: Yes |Stmicroelectronics STI47N60DM6AG RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 67 |
|
$4.7300 / $7.0900 | Buy Now |
|
DISTI #
STI47N60DM6AG-ND
|
DigiKey | POWER TRANSISTORS Min Qty: 1 Lead time: 14 Weeks Container: Tube |
30 In Stock |
|
$3.2252 / $7.6400 | Buy Now |
|
DISTI #
STI47N60DM6AG
|
Avnet Americas | Transistor MOSFET N-CH 600V 36A 3-Pin I2PAK Tube - Rail/Tube (Alt: STI47N60DM6AG) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Tube | 0 |
|
$2.8640 | Buy Now |
|
DISTI #
511-STI47N60DM6AG
|
Mouser Electronics | MOSFETs Automotive-grade N-channel 600 V, 70 mOhm typ 36 A MDmesh DM6 Power MOSFET RoHS: Compliant | 35 |
|
$3.2900 / $6.2000 | Buy Now |
|
|
STMicroelectronics | Automotive-grade N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in an I2PAK package RoHS: Compliant Min Qty: 1 | 35 |
|
$3.8200 / $6.0800 | Buy Now |
|
|
Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks | 0 |
|
$3.3600 | Buy Now |
|
DISTI #
54688100
|
Verical | Trans MOSFET N-CH 600V 36A Automotive AEC-Q101 3-Pin(3+Tab) I2PAK Tube Min Qty: 6 Package Multiple: 1 | Americas - 10 |
|
$3.7500 / $5.2875 | Buy Now |
|
DISTI #
STI47N60DM6AG
|
Avnet Silica | Transistor MOSFET N-CH 600V 36A 3-Pin I2PAK Tube (Alt: STI47N60DM6AG) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days | Silica - 0 |
|
Buy Now | |
|
DISTI #
C1S730201275724
|
Chip1Stop | MOSFET RoHS: Not Compliant pbFree: No Container: Cut Tape | 10 |
|
$3.5600 / $4.2300 | Buy Now |
|
|
LCSC | 600V 36A 250W 80m10V18A 1 N-Channel I2PAK(TO-262) MOSFETs ROHS | 6 |
|
$4.3437 / $6.3555 | Buy Now |
Part Details for STI47N60DM6AG
STI47N60DM6AG CAD Models
STI47N60DM6AG Part Data Attributes
|
|
STI47N60DM6AG
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STI47N60DM6AG
STMicroelectronics
Automotive-grade N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in an I2PAK package
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | I2PAK-3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 700 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 36 A | |
| Drain-source On Resistance-Max | 0.08 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 250 W | |
| Pulsed Drain Current-Max (IDM) | 137 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |