Part Details for STI26NM60N by STMicroelectronics
Overview of STI26NM60N by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for STI26NM60N
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-12261-ND
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DigiKey | MOSFET N-CH 600V 20A I2PAK Min Qty: 1 Lead time: 9 Weeks Container: Tube |
942 In Stock |
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$2.8894 / $4.7900 | Buy Now |
Part Details for STI26NM60N
STI26NM60N CAD Models
STI26NM60N Part Data Attributes:
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STI26NM60N
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STI26NM60N
STMicroelectronics
20A, 600V, 0.165ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-262AA | |
| Package Description | TO-262, I2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 610 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.165 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STI26NM60N
This table gives cross-reference parts and alternative options found for STI26NM60N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STI26NM60N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STI25NM60ND | 21A, 600V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STMicroelectronics | STI26NM60N vs STI25NM60ND |
| LSE20N60 | Power Field-Effect Transistor, 20A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN | Xi’an Lonten Renewable Energy Technology Inc | STI26NM60N vs LSE20N60 |
| STP25NM60ND | N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220 package | STMicroelectronics | STI26NM60N vs STP25NM60ND |
| LSC20N60 | Power Field-Effect Transistor, 20A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Xi’an Lonten Renewable Energy Technology Inc | STI26NM60N vs LSC20N60 |
| IPW60R165CP | Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | STI26NM60N vs IPW60R165CP |
| STI28N60M2 | N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package | STMicroelectronics | STI26NM60N vs STI28N60M2 |
| IPI60R165CP | Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | STI26NM60N vs IPI60R165CP |
| STFI28N60M2 | N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in I2PAKFP package | STMicroelectronics | STI26NM60N vs STFI28N60M2 |
| LSB20N60 | Power Field-Effect Transistor, 20A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Xi’an Lonten Renewable Energy Technology Inc | STI26NM60N vs LSB20N60 |
| SCT3120ALC11 | Power Field-Effect Transistor, 21A I(D), 650V, 0.156ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN | ROHM Semiconductor | STI26NM60N vs SCT3120ALC11 |