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Transistors / Power Field-Effect Transistors / STI23NM60N
Datasheets
STI23NM60N by: STMicroelectronics

19A, 600V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3

Part Details for STI23NM60N by STMicroelectronics

Results Overview of STI23NM60N by STMicroelectronics

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy

STI23NM60N Information

STI23NM60N by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for STI23NM60N

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STI23NM60N Part Data Attributes

Parametric Data
STI23NM60N STMicroelectronics
Buy Now Datasheet
Compare Parts:
STI23NM60N STMicroelectronics 19A, 600V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-262AA
Package Description ROHS COMPLIANT, TO-262, I2PAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 700 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 19 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 76 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STI23NM60N

This table gives cross-reference parts and alternative options found for STI23NM60N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STI23NM60N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
Q67040-S4410 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220-3-31, 3 PIN STI23NM60N vs Q67040-S4410
SPB20N60S5ATMA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN STI23NM60N vs SPB20N60S5ATMA1
SPP20N65C3XKSA1 Infineon Technologies AG $3.4931 Power Field-Effect Transistor, 20.7A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN STI23NM60N vs SPP20N65C3XKSA1
SPB20N60S5E3045 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN STI23NM60N vs SPB20N60S5E3045
FMH20N60S1 Fuji Electric Co Ltd Check for Price Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P(Q), 3 PIN STI23NM60N vs FMH20N60S1
IPA60R160P6 Infineon Technologies AG Check for Price Power Field-Effect Transistor, STI23NM60N vs IPA60R160P6
SPW24N60CFDXK Infineon Technologies AG Check for Price Power Field-Effect Transistor, 21.7A I(D), 600V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 STI23NM60N vs SPW24N60CFDXK
APT20N60BC3 Microsemi Corporation Check for Price Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN STI23NM60N vs APT20N60BC3
SPP20N65C3XKSA Infineon Technologies AG Check for Price Power Field-Effect Transistor, 20.7A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN STI23NM60N vs SPP20N65C3XKSA
SPP20N60C3HKSA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN STI23NM60N vs SPP20N60C3HKSA1

STI23NM60N Related Parts

STI23NM60N Frequently Asked Questions (FAQ)

  • The maximum junction temperature (Tj) of the STI23NM60N is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to prevent thermal runaway.

  • The thermal resistance of the STI23NM60N can be calculated using the following formula: Rth(j-a) = (Tj - Ta) / Pd, where Rth(j-a) is the thermal resistance, Tj is the junction temperature, Ta is the ambient temperature, and Pd is the power dissipation. The datasheet provides the thermal resistance values for different packages and mounting conditions.

  • The recommended gate drive voltage for the STI23NM60N is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.

  • Yes, the STI23NM60N is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate charge, and parasitic capacitances when designing the circuit. The datasheet provides information on the device's high-frequency characteristics and recommended operating conditions.

  • To ensure the reliability of the STI23NM60N in a high-temperature environment, it's essential to follow proper thermal management practices, such as using a heat sink, ensuring good airflow, and keeping the junction temperature below 125°C. Additionally, it's recommended to follow the recommended operating conditions and derating guidelines provided in the datasheet.