Part Details for STI11NM80 by STMicroelectronics
Overview of STI11NM80 by STMicroelectronics
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for STI11NM80
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
06X3630
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Newark | 16/32-Bits Micros |Stmicroelectronics STI11NM80 RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$3.9100 | Buy Now |
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DISTI #
497-13106-5-ND
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DigiKey | MOSFET N-CH 800V 11A I2PAK Lead time: 26 Weeks Container: Tube | Temporarily Out of Stock |
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Buy Now | |
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DISTI #
STI11NM80
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Avnet Americas | Trans MOSFET N-CH 800V 11A 3-Pin I2PAK Tube - Rail/Tube (Alt: STI11NM80) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Tube | 0 |
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RFQ |
Part Details for STI11NM80
STI11NM80 CAD Models
STI11NM80 Part Data Attributes
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STI11NM80
STMicroelectronics
Buy Now
Datasheet
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STI11NM80
STMicroelectronics
N-channel 800 V, 0.35 Ohm, 11 A MDmesh(TM) Power MOSFET in I2PAK
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-262AA | |
| Package Description | ROHS COMPLIANT, TO-262, I2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 1980-01-04 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Additional Feature | ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 400 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |