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Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-6 package
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-STH410N4F7-6AGCT-ND
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DigiKey | MOSFET N-CH 40V 200A H2PAK-6 Min Qty: 1 Lead time: 26 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Temporarily Out of Stock |
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$2.8125 / $6.8900 | Buy Now |
DISTI #
STH410N4F7-6AG
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Avnet Americas | Trans MOSFET N-CH 40V 200A 6-Pin H2PAK T/R - Tape and Reel (Alt: STH410N4F7-6AG) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks, 0 Days Container: Reel | 0 |
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$2.4975 | Buy Now |
DISTI #
511-STH410N4F7-6AG
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Mouser Electronics | MOSFETs Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 RoHS: Compliant | 990 |
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$2.8100 / $5.9000 | Buy Now |
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STMicroelectronics | Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-6 package RoHS: Compliant Min Qty: 1 | 990 |
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$2.8700 / $5.7800 | Buy Now |
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Future Electronics | MOSFET 40V 0.0011 OHM AUTOMOTIVE RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks Container: Reel | 0Reel |
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$2.7600 | Buy Now |
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Future Electronics | MOSFET 40V 0.0011 OHM AUTOMOTIVE RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks Container: Reel | 0Reel |
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$2.7600 | Buy Now |
DISTI #
STH410N4F7-6AG
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Avnet Silica | Trans MOSFET N-CH 40V 200A 6-Pin H2PAK T/R (Alt: STH410N4F7-6AG) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days | Silica - 0 |
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Buy Now |
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STH410N4F7-6AG
STMicroelectronics
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STH410N4F7-6AG
STMicroelectronics
Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-6 package
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | H2PAK-7/6 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 26 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Additional Feature | BULK: 1000 | |
Avalanche Energy Rating (Eas) | 1900 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 200 A | |
Drain-source On Resistance-Max | 0.0011 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 390 pF | |
JESD-30 Code | R-PSSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 365 W | |
Pulsed Drain Current-Max (IDM) | 800 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |