Datasheets
STH410N4F7-6AG by: STMicroelectronics

Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-6 package

Part Details for STH410N4F7-6AG by STMicroelectronics

Overview of STH410N4F7-6AG by STMicroelectronics

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Applications Automotive

Price & Stock for STH410N4F7-6AG

Part # Distributor Description Stock Price Buy
DISTI # 497-STH410N4F7-6AGCT-ND
DigiKey MOSFET N-CH 40V 200A H2PAK-6 Min Qty: 1 Lead time: 26 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) Temporarily Out of Stock
  • 1 $6.8900
  • 10 $4.6490
  • 100 $3.3792
  • 500 $2.8382
  • 1,000 $2.8125
$2.8125 / $6.8900 Buy Now
DISTI # STH410N4F7-6AG
Avnet Americas Trans MOSFET N-CH 40V 200A 6-Pin H2PAK T/R - Tape and Reel (Alt: STH410N4F7-6AG) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks, 0 Days Container: Reel 0
  • 1,000 $2.4975
$2.4975 Buy Now
DISTI # 511-STH410N4F7-6AG
Mouser Electronics MOSFETs Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 RoHS: Compliant 990
  • 1 $5.9000
  • 10 $4.2600
  • 25 $4.2200
  • 100 $3.2400
  • 250 $3.2100
  • 500 $2.9300
  • 1,000 $2.8100
$2.8100 / $5.9000 Buy Now
STMicroelectronics Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-6 package RoHS: Compliant Min Qty: 1 990
  • 1 $5.7800
  • 10 $4.1800
  • 25 $4.1400
  • 100 $3.1800
  • 250 $3.1500
  • 500 $2.8700
$2.8700 / $5.7800 Buy Now
Future Electronics MOSFET 40V 0.0011 OHM AUTOMOTIVE RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks Container: Reel 0
Reel
  • 1,000 $2.7600
$2.7600 Buy Now
Future Electronics MOSFET 40V 0.0011 OHM AUTOMOTIVE RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks Container: Reel 0
Reel
  • 1,000 $2.7600
$2.7600 Buy Now
DISTI # STH410N4F7-6AG
Avnet Silica Trans MOSFET N-CH 40V 200A 6-Pin H2PAK T/R (Alt: STH410N4F7-6AG) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now

Part Details for STH410N4F7-6AG

STH410N4F7-6AG CAD Models

STH410N4F7-6AG Part Data Attributes

STH410N4F7-6AG STMicroelectronics
Buy Now Datasheet
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STH410N4F7-6AG STMicroelectronics Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-6 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Package Description H2PAK-7/6
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Samacsys Manufacturer STMicroelectronics
Additional Feature BULK: 1000
Avalanche Energy Rating (Eas) 1900 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 200 A
Drain-source On Resistance-Max 0.0011 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 390 pF
JESD-30 Code R-PSSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 365 W
Pulsed Drain Current-Max (IDM) 800 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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