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Transistors / Power Field-Effect Transistors / STH275N8F7-6AG
Datasheets
STH275N8F7-6AG by:
STMicroelectronics
Hongxing Electrical Ltd
STMicroelectronics
Not Found

Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package

Part Details for STH275N8F7-6AG by STMicroelectronics

Results Overview of STH275N8F7-6AG by STMicroelectronics

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STH275N8F7-6AG Information

STH275N8F7-6AG by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STH275N8F7-6AG

Part # Distributor Description Stock Price Buy
DISTI # 26AH0178
Newark Mosfet, Aec-Q101, N-Ch, 80V, 180A Rohs Compliant: Yes |Stmicroelectronics STH275N8F7-6AG RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
  • 1 $6.6700
  • 10 $5.0600
  • 25 $5.0500
  • 50 $4.5700
  • 100 $4.0900
  • 250 $3.9400
  • 500 $3.7900
  • 1,000 $3.7800
$3.7800 / $6.6700 Buy Now
DISTI # 497-15474-1-ND
DigiKey MOSFET N-CH 80V 180A H2PAK-6 Min Qty: 1 Lead time: 26 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 1842
In Stock
  • 1 $5.5400
  • 10 $3.8960
  • 100 $2.9070
  • 500 $2.5984
  • 1,000 $2.5409
$2.5409 / $5.5400 Buy Now
DISTI # STH275N8F7-6AG
Avnet Americas Power MOSFET, N Channel, 80 V, 180 A, 2.1 Milliohms, H2PAK-6, 7 Pins, Surface Mount - Tape and Reel ... (Alt: STH275N8F7-6AG) more RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks, 0 Days Container: Reel 0
  • 1,000 $2.5730
  • 2,000 $2.5569
  • 4,000 $2.5095
  • 6,000 $2.4639
  • 8,000 $2.4199
$2.4199 / $2.5730 Buy Now
DISTI # 511-STH275N8F7-6AG
Mouser Electronics MOSFETs Automotive-grade N-channel 80 V, 1.7 mOhm typ 180 A STripFET F7 Power MOSFET in RoHS: Compliant 690
  • 1 $5.4300
  • 10 $3.8200
  • 25 $3.8100
  • 100 $2.8500
  • 500 $2.5500
  • 1,000 $2.5400
  • 2,000 $2.5100
$2.5100 / $5.4300 Buy Now
STMicroelectronics Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package RoHS: Compliant Min Qty: 1 690
  • 1 $5.3200
  • 10 $3.7400
  • 25 $3.7300
  • 100 $2.7900
  • 250 $2.7900
  • 500 $2.5000
$2.5000 / $5.3200 Buy Now
Future Electronics N-Channel 80 V 2.1 mOhm Surface Mount STripFET™ F7 Power MOSFET - H²PAK-6 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks Container: Reel 0
Reel
  • 1,000 $2.4900
$2.4900 Buy Now
Future Electronics N-Channel 80 V 2.1 mOhm Surface Mount STripFET™ F7 Power MOSFET - H²PAK-6 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks Container: Reel 0
Reel
  • 1,000 $2.4900
$2.4900 Buy Now
DISTI # 87633062
Verical Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) H2PAK T/R Automotive AEC-Q101 Min Qty: 400 Package Multiple: 400 Date Code: 2340 Americas - 400
  • 400 $4.6581
$4.6581 Buy Now
DISTI # STH275N8F7-6AG
IBS Electronics POWER MOSFET N CHANNEL 80 V 180 A 2.1 MILLIOHMS H2PAK-6 7 PINS SURFACE MOUNT Min Qty: 1000 Package Multiple: 1 0
  • 1,000 $3.3117
$3.3117 Buy Now
DISTI # STH275N8F7-6AG
Avnet Silica Power MOSFET N Channel 80 V 180 A 21 Milliohms H2PAK6 7 Pins Surface Mount (Alt: STH275N8F7-6AG) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days Silica - 1000
Buy Now
DISTI # STH275N8F7-6AG
EBV Elektronik Power MOSFET N Channel 80 V 180 A 21 Milliohms H2PAK6 7 Pins Surface Mount (Alt: STH275N8F7-6AG) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 27 Weeks, 0 Days EBV - 172000
Buy Now
Vyrian Transistors 43391
RFQ

Part Details for STH275N8F7-6AG

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STH275N8F7-6AG Part Data Attributes

Parametric Data
STH275N8F7-6AG STMicroelectronics
Buy Now Datasheet
Compare Parts:
STH275N8F7-6AG STMicroelectronics Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 775 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 180 A
Drain-source On Resistance-Max 0.0021 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 236 pF
JESD-30 Code R-PSSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 315 W
Pulsed Drain Current-Max (IDM) 720 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

STH275N8F7-6AG Related Parts

STH275N8F7-6AG Frequently Asked Questions (FAQ)

  • STMicroelectronics recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.

  • Ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Implement proper thermal management, such as heat sinks or thermal interfaces, to maintain a safe operating temperature.

  • The STH275N8F7-6AG has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures when handling the device. Use an ESD wrist strap or mat, and ensure that the PCB is properly grounded.

  • Yes, the STH275N8F7-6AG is qualified for automotive and high-reliability applications. It meets the requirements of the AEC-Q101 standard for automotive applications and is suitable for use in high-reliability systems.

  • STMicroelectronics recommends soldering the device using a reflow soldering process with a peak temperature of 260°C for 20-30 seconds. Ensure that the soldering process is performed in a nitrogen atmosphere to prevent oxidation.