Part Details for STH140N6F7-2 by STMicroelectronics
Overview of STH140N6F7-2 by STMicroelectronics
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Price & Stock for STH140N6F7-2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
56Y0961
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Newark | Lv Mosfet Trench |Stmicroelectronics STH140N6F7-2 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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Future Electronics | STH140N6F7 Series 60 V 0.0032 Ohm N-Channel STripFET™ F7 Power MOSFET - H²PAK-2 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
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$0.6400 / $0.6900 | Buy Now |
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Future Electronics | STH140N6F7 Series 60 V 0.0032 Ohm N-Channel STripFET™ F7 Power MOSFET - H²PAK-2 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
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$0.7000 / $0.7550 | Buy Now |
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DISTI #
STH140N6F7-2
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Avnet Silica | Trans MOSFET N-CH 60V 80A 3-Pin H2PAK T/R (Alt: STH140N6F7-2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 53 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Chip1Cloud | MOSFET N-CH 60V 80A H2PAK-2 / N-Channel 60 V 80A (Tc) 158W (Tc) Surface Mount H2Pak-2 | 72600 |
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RFQ | |
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DISTI #
STH140N6F7-2
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EBV Elektronik | Trans MOSFET N-CH 60V 80A 3-Pin H2PAK T/R (Alt: STH140N6F7-2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 53 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for STH140N6F7-2
STH140N6F7-2 CAD Models
STH140N6F7-2 Part Data Attributes
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STH140N6F7-2
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STH140N6F7-2
STMicroelectronics
N-channel 60 V, 0.0028 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-2 package
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Additional Feature | BULK: 1000 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.0032 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 193 pF | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 158 W | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |