STGWT40V60DF
STMicroelectronics
Description: Trench gate field-stop IGBT, V series 600 V, 40 A very high speed

Overview of STGWT40V60DF by STMicroelectronics

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  • Distributor Offerings: ( 6 listings )
  • Number of FFF Equivalents: ( 0 crosses )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 crosses )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for STGWT40V60DF by STMicroelectronics

Part # Manufacturer Description Stock Price Buy
DISTI # 06X3611
Newark 16/32-Bits Micros |Stmicroelectronics STGWT40V60DF RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 497-13771-5-ND
DigiKey IGBT 600V 80A 283W TO3P-3 Min Qty: 1 Lead time: 34 Weeks Container: Tube 20
In Stock
  • 1 $4.3600
$4.3600 Buy Now
DISTI # STGWT40V60DF
Avnet Americas Trans IGBT Chip N-CH 600V 80A 3-Pin TO-39 - Rail/Tube (Alt: STGWT40V60DF) RoHS: Compliant Min Qty: 600 Package Multiple: 300 Container: Tube 0
RFQ
STMicroelectronics Trench gate field-stop IGBT, V series 600 V, 40 A very high speed RoHS: Compliant Min Qty: 1 0
  • 1 $4.1200
  • 10 $3.7200
  • 25 $3.6200
  • 100 $3.2200
  • 300 $3.2200
$3.2200 / $4.1200 Buy Now
DISTI # STGWT40V60DF
Avnet Silica Trans IGBT Chip N-CH 600V 80A 3-Pin TO-39 (Alt: STGWT40V60DF) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 35 Weeks, 0 Days Silica - 0
Buy Now
DISTI # STGWT40V60DF
EBV Elektronik Trans IGBT Chip N-CH 600V 80A 3-Pin TO-39 (Alt: STGWT40V60DF) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 35 Weeks, 0 Days EBV - 0
Buy Now

CAD Models for STGWT40V60DF by STMicroelectronics
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Part Data Attributes for STGWT40V60DF by STMicroelectronics

STGWT40V60DF
STMicroelectronics
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
STMICROELECTRONICS
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
STMicroelectronics
Case Connection
COLLECTOR
Collector Current-Max (IC)
80 A
Collector-Emitter Voltage-Max
600 V
Configuration
SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max
7 V
Gate-Emitter Voltage-Max
20 V
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
283 W
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
241 ns
Turn-on Time-Nom (ton)
73 ns
VCEsat-Max
2.3 V
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  1. STGWT40V60DF
    STMicroelectronics
    Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
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