STGWT40H65DFB by
STMicroelectronics

Description: Trench gate field-stop 650 V, 40 A high speed HB series IGBT

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Overview of STGWT40H65DFB by STMicroelectronics

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Distributor Offerings: ( 12 listings )
Number of FFF Equivalents: ( 0 crosses )
CAD Models: ( Available )
Number of Functional Equivalents: ( 0 crosses )
Part Data Attributes ( Available )
Reference Designs: ( Not Available )

Where used in Applications: Industrial Automation Electronic Manufacturing

Part #	Manufacturer	Description	Stock	Price	Buy
STGWT40H65DFB DISTI # 69AH2738	Newark	Igbt, 650V, 80A, 175Deg C, 283W Rohs Compliant: Yes \|Stmicroelectronics STGWT40H65DFB RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk	92	1 $3.3900 10 $3.0400 25 $2.6900 60 $2.5000 120 $2.3100 270 $2.2800 510 $2.2500	$2.2500 / $3.3900	Buy Now
STGWT40H65DFB DISTI # 497-14229-5-ND	DigiKey	IGBT TRENCH FS 650V 80A TO3P Min Qty: 1 Lead time: 15 Weeks Container: Tube	227 In Stock	1 $4.7800 30 $2.6640 120 $2.1964 510 $1.8527 1,020 $1.7271 2,010 $1.7091	$1.7091 / $4.7800	Buy Now
STGWT40H65DFB DISTI # STGWT40H65DFB	Avnet Americas	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube - Rail/Tube (Alt: STGWT40H65DFB) RoHS: Compliant Min Qty: 600 Package Multiple: 300 Lead time: 15 Weeks, 0 Days Container: Tube	0	600 $1.7308 1,200 $1.7199 1,800 $1.6880 3,000 $1.6573 6,000 $1.6422	$1.6422 / $1.7308	Buy Now
STGWT40H65DFB DISTI # 511-STGWT40H65DFB	Mouser Electronics	IGBTs 650V 40A HSpd trench gate field-stop IGB RoHS: Compliant	0	1 $4.4100 25 $2.5700 100 $2.1300 300 $1.8500 600 $1.7200 1,200 $1.7000	$1.7000 / $4.4100	Order Now
STGWT40H65DFB DISTI # E54:1762_09706961	Arrow Electronics	Trans IGBT Chip N-CH 650V 80A 283W 3-Pin(3+Tab) TO-3P Tube Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2421	Europe - 249	1 $2.3490 10 $2.3440 25 $1.9340 60 $1.6960 120 $1.6950 270 $1.6530	$1.6530 / $2.3490	Buy Now
STGWT40H65DFB	STMicroelectronics	Trench gate field-stop 650 V, 40 A high speed HB series IGBT RoHS: Compliant Min Qty: 1	0	1 $4.3200 10 $4.3200 25 $2.5200 100 $2.0900 300 $1.8100	$1.8100 / $4.3200	Buy Now
STGWT40H65DFB	Future Electronics	STGWT40 Series 650 V 80 A Through Hole Silicon IGBT - TO-3P RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 20 Lead time: 15 Weeks Container: Tube	0 Tube	20 $1.8300 80 $1.7700 300 $1.7200 800 $1.6800 2,000 $1.6300	$1.6300 / $1.8300	Buy Now
STGWT40H65DFB	Future Electronics	STGWT40 Series 650 V 80 A Through Hole Silicon IGBT - TO-3P RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 20 Lead time: 15 Weeks Container: Tube	0 Tube	20 $1.8300 80 $1.7700 300 $1.7200 800 $1.6800 2,000 $1.6300	$1.6300 / $1.8300	Buy Now
STGWT40H65DFB DISTI # 81753483	Verical	Trans IGBT Chip N-CH 650V 80A 283W 3-Pin(3+Tab) TO-3P Tube Min Qty: 3 Package Multiple: 1 Date Code: 2421	Americas - 249	3 $2.3490 10 $2.3440 25 $1.9340 60 $1.6960 120 $1.6950 270 $1.6530	$1.6530 / $2.3490	Buy Now
STGWT40H65DFB DISTI # STGWT40H65DFB	TME	Transistor: IGBT, 650V, 40A, 283W, TO3P Min Qty: 1	0	1 $5.0400 3 $4.5400 10 $4.2000 30 $4.0000 120 $3.5900 600 $3.4800 1,200 $3.3600 3,000 $3.1200 9,000 $3.0000	$3.0000 / $5.0400	RFQ
STGWT40H65DFB DISTI # STGWT40H65DFB	Avnet Silica	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube (Alt: STGWT40H65DFB) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 16 Weeks, 0 Days	Silica - 300			Buy Now
STGWT40H65DFB DISTI # STGWT40H65DFB	EBV Elektronik	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube (Alt: STGWT40H65DFB) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 16 Weeks, 0 Days	EBV - 0			Buy Now

CAD Models for STGWT40H65DFB by STMicroelectronics

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Part Data Attributes for STGWT40H65DFB by STMicroelectronics

Parametric Data

Show differences only	STGWT40H65DFB STMicroelectronics Buy Now	part-to-be-compared STMicroelectronics Buy Now
-	-	-
Rohs Code	Yes
Part Life Cycle Code	Active
Ihs Manufacturer	STMICROELECTRONICS
Reach Compliance Code	not_compliant
ECCN Code	EAR99
Factory Lead Time	15 Weeks
Samacsys Manufacturer	STMicroelectronics
Collector Current-Max (IC)	80 A
Collector-Emitter Voltage-Max	650 V
Gate-Emitter Voltage-Max	20 V
JESD-609 Code	e3
Operating Temperature-Max	175 °C
Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	283 W
Surface Mount	NO
Terminal Finish	Matte Tin (Sn) - annealed
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED

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Trench gate field-stop 650 V, 40 A high speed HB series IGBT

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