Part Details for STGWT30V60DF by STMicroelectronics
Results Overview of STGWT30V60DF by STMicroelectronics
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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STGWT30V60DF Information
STGWT30V60DF by STMicroelectronics is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STGWT30V60DF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-13770-5-ND
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DigiKey | IGBT TRENCH FS 600V 60A TO-3P Min Qty: 1 Lead time: 32 Weeks Container: Tube |
78 In Stock |
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$2.4810 / $4.4700 | Buy Now |
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DISTI #
V79:2366_17794152
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Arrow Electronics | Trans IGBT Chip N-CH 600V 60A 258W 3-Pin(3+Tab) TO-3P Tube Min Qty: 1 Package Multiple: 1 Lead time: 99 Weeks Date Code: 1326 | Americas - 378 |
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$1.4020 | Buy Now |
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DISTI #
26118425
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Verical | Trans IGBT Chip N-CH 600V 60A 258W 3-Pin(3+Tab) TO-3P Tube Min Qty: 5 Package Multiple: 1 Date Code: 1326 | Americas - 378 |
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$1.4020 | Buy Now |
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Bristol Electronics | 228 |
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RFQ | ||
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Quest Components | 182 |
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$4.1943 / $6.8016 | Buy Now | |
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DISTI #
STGWT30V60DF
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Avnet Silica | Trans IGBT Chip NCH 600V 60A 3Pin TO3P (Alt: STGWT30V60DF) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
STGWT30V60DF
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EBV Elektronik | Trans IGBT Chip NCH 600V 60A 3Pin TO3P (Alt: STGWT30V60DF) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for STGWT30V60DF
STGWT30V60DF CAD Models
STGWT30V60DF Part Data Attributes
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STGWT30V60DF
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STGWT30V60DF
STMicroelectronics
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
STGWT30V60DF Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) of the STGWT30V60DF is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to ensure a long lifespan.
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To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's exposed pad, and ensure the heat sink is securely fastened to the PCB. Additionally, consider using a heat sink with a high thermal conductivity and a sufficient surface area to dissipate heat efficiently.
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For optimal performance and thermal management, it's recommended to follow a 4-layer PCB layout with a dedicated power plane, a ground plane, and two signal layers. Keep the power traces short and wide, and ensure the decoupling capacitors are placed close to the device. Also, consider using a thermal relief pattern on the PCB to improve heat dissipation.
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To protect the device from overvoltage, use a voltage regulator or a voltage clamp to limit the input voltage to the recommended maximum rating. For overcurrent protection, consider using a current sense resistor and a comparator to detect excessive current. You can also use a dedicated overcurrent protection IC or a fuse to prevent damage to the device.
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The recommended gate drive voltage for the STGWT30V60DF is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and the required switching frequency. It's essential to consult the datasheet and application notes for more information on gate drive voltage optimization.