We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Findchips Blog
Transistors / IGBTs / STGWT30H60DFB
Datasheets
STGWT30H60DFB by:
STMicroelectronics
Hongxing Electrical Ltd
STMicroelectronics
Not Found

Trench gate field-stop 600 V, 30 A high speed HB series IGBT

Part Details for STGWT30H60DFB by STMicroelectronics

Results Overview of STGWT30H60DFB by STMicroelectronics

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

STGWT30H60DFB Information

STGWT30H60DFB by STMicroelectronics is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STGWT30H60DFB

Part # Distributor Description Stock Price Buy
DISTI # 47AK6957
Newark Igbt, Single, 600V, 60A, To-3P, Continuous Collector Current:60A, Collector Emitter Saturation Vol... tage:1.55V, Power Dissipation:260W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:175°C Rohs Compliant: Yes |Stmicroelectronics STGWT30H60DFB more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 519
  • 1 $2.8300
  • 10 $2.3700
  • 25 $1.9100
  • 50 $1.8100
  • 100 $1.7100
  • 250 $1.6300
  • 600 $1.5400
$1.5400 / $2.8300 Buy Now
DISTI # 497-15140-5-ND
DigiKey IGBT TRENCH FS 600V 60A TO-3P Min Qty: 1 Lead time: 15 Weeks Container: Tube 541
In Stock
  • 1 $4.3100
  • 30 $2.3807
  • 120 $1.9559
  • 510 $1.6443
  • 1,020 $1.5305
  • 2,010 $1.4968
$1.4968 / $4.3100 Buy Now
DISTI # STGWT30H60DFB
Avnet Americas Trans IGBT Chip N-CH 600V 60A 3-Pin TO-3P Tube - Rail/Tube (Alt: STGWT30H60DFB) RoHS: Compliant Min Qty: 300 Package Multiple: 1 Lead time: 15 Weeks, 0 Days Container: Tube 600
  • 300 $1.5157
  • 310 $1.5062
  • 610 $1.4783
  • 1,500 $1.4514
  • 3,000 $1.4255
$1.4255 / $1.5157 Buy Now
DISTI # 511-STGWT30H60DFB
Mouser Electronics IGBTs Trench gate field-stop 600 V, 30 A high speed HB series IGBT RoHS: Compliant 842
  • 1 $3.9200
  • 10 $3.1400
  • 25 $2.3900
  • 100 $1.9600
  • 300 $1.6400
  • 600 $1.5300
  • 1,200 $1.4900
$1.4900 / $3.9200 Buy Now
DISTI # E02:0323_08085374
Arrow Electronics Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(3+Tab) TO-3P Tube Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2428 Europe - 600
  • 1 $3.0734
  • 10 $3.0626
  • 25 $2.1320
  • 100 $1.9047
  • 300 $1.6980
$1.6980 / $3.0734 Buy Now
STMicroelectronics Trench gate field-stop 600 V, 30 A high speed HB series IGBT RoHS: Compliant Min Qty: 1 834
  • 1 $3.8400
  • 10 $3.0800
  • 25 $2.3400
  • 100 $1.9200
  • 300 $1.6100
$1.6100 / $3.8400 Buy Now
DISTI # 87482621
Verical Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(3+Tab) TO-3P Tube Min Qty: 4 Package Multiple: 1 Date Code: 2428 Americas - 600
  • 4 $2.7011
  • 10 $2.6767
  • 25 $1.9397
  • 100 $1.7476
  • 300 $1.5249
  • 600 $1.4964
  • 5,100 $1.4771
$1.4771 / $2.7011 Buy Now
DISTI # STGWT30H60DFB
TME Transistor: IGBT, 600V, 30A, 260W, TO3P Min Qty: 1 0
  • 1 $3.6600
  • 3 $3.2900
  • 10 $3.0600
  • 30 $2.9100
  • 120 $2.6200
  • 600 $2.5300
  • 1,200 $2.4400
  • 3,000 $2.2700
  • 9,000 $2.1900
$2.1900 / $3.6600 RFQ
DISTI # STGWT30H60DFB
IBS Electronics TRANSISTOR IGBT 600V 60A TO-3P ROHS COMPLIANT: YES |STMICROELECTRONICS STGWT30H60DFB Min Qty: 600 Package Multiple: 1 0
  • 600 $2.0748
  • 600 $2.0482
  • 900 $2.0482
  • 1,200 $2.0349
  • 1,500 $2.0083
$2.0083 / $2.0748 Buy Now
DISTI # STGWT30H60DFB
Avnet Silica Trans IGBT Chip NCH 600V 60A 3Pin TO3P Tube (Alt: STGWT30H60DFB) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 16 Weeks, 0 Days Silica - 1500
Buy Now
DISTI # STGWT30H60DFB
EBV Elektronik Trans IGBT Chip NCH 600V 60A 3Pin TO3P Tube (Alt: STGWT30H60DFB) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now
LCSC 260W 60A 600V FS(Field Stop) TO-3P-3 IGBT Transistors / Modules ROHS 2
  • 1 $5.5751
  • 10 $5.3287
  • 30 $5.1787
  • 100 $5.0533
$5.0533 / $5.5751 Buy Now

Part Details for STGWT30H60DFB

STGWT30H60DFB CAD Models

  • Part Symbol

    Part Symbol

  • Footprint

    footprint

  • 3D Model

    3D Model

Available Download Formats

Sign in to download CAD models Register or Sign In

By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy

STGWT30H60DFB Part Data Attributes

Parametric Data
STGWT30H60DFB STMicroelectronics
Buy Now Datasheet
Compare Parts:
STGWT30H60DFB STMicroelectronics Trench gate field-stop 600 V, 30 A high speed HB series IGBT
Select a part to compare:
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Package Description TO-3P, 3PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 15 Weeks
Samacsys Manufacturer STMicroelectronics
Case Connection COLLECTOR
Collector Current-Max (IC) 60 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 7 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 260 W
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 223 ns
Turn-on Time-Nom (ton) 51.1 ns
VCEsat-Max 2 V

STGWT30H60DFB Related Parts

STGWT30H60DFB Frequently Asked Questions (FAQ)

  • The maximum junction temperature for the STGWT30H60DFB is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.

  • To ensure proper cooling, it's essential to provide a heat sink with a thermal resistance of less than 1°C/W. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.

  • The recommended gate resistor value for the STGWT30H60DFB is between 10 ohms and 20 ohms. However, the optimal value may vary depending on the specific application and switching frequency.

  • Yes, the STGWT30H60DFB is suitable for high-reliability applications. It's manufactured using a robust process and has undergone rigorous testing to ensure its reliability. However, it's essential to follow proper design and assembly guidelines to ensure the device operates within its specifications.

  • To protect the STGWT30H60DFB from overvoltage and overcurrent, use a suitable voltage regulator and overcurrent protection circuitry. Additionally, ensure the device is operated within its specified voltage and current ratings.