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Trench gate field-stop 650 V, 30 A high speed HB series IGBT
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
14AC7541
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Newark | Igbt, Single, 650V, 60A, To-247, Dc Collector Current:60A, Collector Emitter Saturation Voltage Vce(On):1.75V, Power Dissipation Pd:260W, Collector Emitter Voltage V(Br)Ceo:650V, Transistor Case Style:To-247, No. Of Pins:3Pins, Rohs Compliant: Yes |Stmicroelectronics STGWA30H65FB Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$2.1700 / $4.0000 | Buy Now |
DISTI #
48AC3290
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Newark | Igbt |Stmicroelectronics STGWA30H65FB Min Qty: 600 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$2.1900 | Buy Now |
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STMicroelectronics | Trench gate field-stop 650 V, 30 A high speed HB series IGBT RoHS: Compliant Min Qty: 1 | 0 |
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$2.5200 / $3.4100 | Buy Now |
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STGWA30H65FB
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STGWA30H65FB
STMicroelectronics
Trench gate field-stop 650 V, 30 A high speed HB series IGBT
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Manufacturer Package Code | TO-247 long leads | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Collector Current-Max (IC) | 60 A | |
Collector-Emitter Voltage-Max | 650 V | |
Configuration | SINGLE | |
Gate-Emitter Thr Voltage-Max | 7 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 260 W | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 223 ns | |
Turn-on Time-Nom (ton) | 51.1 ns | |
VCEsat-Max | 2 V |