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Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
26Y5794
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Newark | Igbt Single Transistor, 30 A, 1.85 V, 259 W, 1.2 Kv, To-247, 3 |Stmicroelectronics STGWA15M120DF3 Min Qty: 600 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
497-15059-5-ND
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DigiKey | IGBT 1200V 30A 259W Min Qty: 600 Lead time: 15 Weeks Container: Tube | Temporarily Out of Stock |
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$2.6664 | Buy Now |
DISTI #
STGWA15M120DF3
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Avnet Americas | Trans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGWA15M120DF3) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
|
$2.1532 / $2.4503 | Buy Now |
DISTI #
511-STGWA15M120DF3
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Mouser Electronics | IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 15 A low loss RoHS: Compliant | 0 |
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$2.6700 / $4.3900 | Order Now |
DISTI #
V36:1790_06560796
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Arrow Electronics | Trans IGBT Chip N-CH 1200V 30A 259W 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2346 | Americas - 5400 |
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$2.5220 / $4.3200 | Buy Now |
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STMicroelectronics | Trench gate field-stop IGBT, M series 1200 V, 15 A low loss RoHS: Compliant Min Qty: 1 | 0 |
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$2.7200 / $4.3000 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 600 Lead time: 15 Weeks | 0 |
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$2.2000 | Buy Now |
DISTI #
78453731
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Verical | Trans IGBT Chip N-CH 1200V 30A 259W 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 3 Package Multiple: 1 Date Code: 2346 | Americas - 5400 |
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$2.5220 / $4.3200 | Buy Now |
DISTI #
STGWA15M120DF3
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TME | Transistor: IGBT, 1.2kV, 15A, 259W, TO247-3 Min Qty: 1 | 0 |
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$2.6400 / $4.4300 | RFQ |
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ComSIT USA | TRENCH GATE FIELD-STOP IGBT Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247 RoHS: Compliant | Europe - 600 |
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RFQ |
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STGWA15M120DF3
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STGWA15M120DF3
STMicroelectronics
Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 15 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 30 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 7 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 259 W | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 406 ns | |
Turn-on Time-Nom (ton) | 39 ns | |
VCEsat-Max | 2.3 V |