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Part Details for STGW40H65DFB-4 by STMicroelectronics
Overview of STGW40H65DFB-4 by STMicroelectronics
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
Price & Stock for STGW40H65DFB-4
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
14AC7544
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Newark | Igbt, Single, 650V, 80A, To-247-4, Dc Collector Current:80A, Collector Emitter Saturation Voltage Vce(On):1.6V, Power Dissipation Pd:283W, Collector Emitter Voltage V(Br)Ceo:650V, Transistor Case Style:To-247, No. Of Pins:4Pins, Rohs Compliant: Yes |Stmicroelectronics STGW40H65DFB-4 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$4.0800 | Buy Now |
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DISTI #
497-18295-ND
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DigiKey | IGBT Min Qty: 1 Lead time: 20 Weeks Container: Tube |
590 In Stock |
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$2.5224 / $5.1800 | Buy Now |
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DISTI #
STGW40H65DFB-4
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Avnet Americas | Transistor I GBT N-CH 650V 80A 4-Pin TO-247 Tube - Trays (Alt: STGW40H65DFB-4) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Container: Tray | 0 |
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RFQ | |
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DISTI #
511-STGW40H65DFB-4
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Mouser Electronics | IGBT Transistors Trench gate field-stop 650 V, 40 A high speed HB series IGBT RoHS: Compliant | 0 |
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Order Now | |
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STMicroelectronics | Trench gate field-stop 650 V, 40 A high speed HB series IGBT RoHS: Compliant Min Qty: 1 | 0 |
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$3.0700 / $5.0800 | Buy Now |
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DISTI #
STGW40H65DFB-4
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TME | Transistor: IGBT, 650V, 40A, 283W, TO247-4 Min Qty: 1 | 0 |
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$3.0600 / $5.1200 | RFQ |
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Ameya Holding Limited | IGBT | 590 |
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RFQ | |
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DISTI #
STGW40H65DFB-4
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Avnet Silica | Transistor I GBT N-CH 650V 80A 4-Pin TO-247 Tube (Alt: STGW40H65DFB-4) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 16 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
STGW40H65DFB-4
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EBV Elektronik | Transistor I GBT N-CH 650V 80A 4-Pin TO-247 Tube (Alt: STGW40H65DFB-4) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for STGW40H65DFB-4
STGW40H65DFB-4 CAD Models
STGW40H65DFB-4 Part Data Attributes
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STGW40H65DFB-4
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STGW40H65DFB-4
STMicroelectronics
Trench gate field-stop 650 V, 40 A high speed HB series IGBT
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Manufacturer Package Code | TO247-4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 80 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 7 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 283 W | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 209 ns | |
| Turn-on Time-Nom (ton) | 54.8 ns | |
| VCEsat-Max | 2 V |