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Part Details for STGW35HF60WDI by STMicroelectronics
Overview of STGW35HF60WDI by STMicroelectronics
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for STGW35HF60WDI
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
55R6927
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Newark | Igbt |Stmicroelectronics STGW35HF60WDI Min Qty: 600 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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STMicroelectronics | 35 A, 600 V ultrafast IGBT with low drop diode RoHS: Compliant Min Qty: 1 | 0 |
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$3.9100 / $5.3000 | Buy Now |
|
|
Chip1Cloud | Resonant converters | 49400 |
|
RFQ |
Part Details for STGW35HF60WDI
STGW35HF60WDI CAD Models
STGW35HF60WDI Part Data Attributes
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STGW35HF60WDI
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STGW35HF60WDI
STMicroelectronics
35 A, 600 V ultrafast IGBT with low drop diode
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-247 | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Collector Current-Max (IC) | 60 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 5.75 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 200 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 295 ns | |
| Turn-on Time-Nom (ton) | 45 ns |