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Part Details for STGP5H60DF by STMicroelectronics
Overview of STGP5H60DF by STMicroelectronics
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for STGP5H60DF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
45AC7597
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Newark | Igbt, Single, 600V, 10A, To-220Ab, Continuous Collector Current:10A, Collector Emitter Saturation Voltage:1.5V, Power Dissipation:88W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:175°C Rohs Compliant: Yes |Stmicroelectronics STGP5H60DF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.7390 / $1.7700 | Buy Now |
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DISTI #
497-16484-5-ND
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DigiKey | TRENCH GATE FIELD-STOP IGBT, H S Min Qty: 1 Lead time: 15 Weeks Container: Tube |
2000 In Stock |
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$0.5627 / $1.0500 | Buy Now |
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DISTI #
STGP5H60DF
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Avnet Americas | Trans IGBT Chip N-CH 600V 10A 3-Pin TO-220 Tube - Tape and Reel (Alt: STGP5H60DF) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$0.6280 / $0.6550 | Buy Now |
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DISTI #
511-STGP5H60DF
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Mouser Electronics | IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 5 A high speed RoHS: Compliant | 0 |
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$0.5620 / $1.0500 | Order Now |
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STMicroelectronics | Trench gate field-stop IGBT, H series 600 V, 5 A high speed RoHS: Compliant Min Qty: 1 | 0 |
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$0.5600 / $1.0300 | Buy Now |
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Future Electronics | H Series 600 V 10 A Flange Mount Trench Gate Field-Stop IGBT - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks Container: Tube | 1700Tube |
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$0.5150 / $0.6150 | Buy Now |
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Future Electronics | H Series 600 V 10 A Flange Mount Trench Gate Field-Stop IGBT - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 1000 Lead time: 15 Weeks Container: Tube | 0Tube |
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$0.5500 / $0.5950 | Buy Now |
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Future Electronics | H Series 600 V 10 A Flange Mount Trench Gate Field-Stop IGBT - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 1000 Lead time: 15 Weeks Container: Tube | 0Tube |
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$0.5500 / $0.5950 | Buy Now |
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DISTI #
STGP5H60DF
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TME | Transistor: IGBT, 600V, 5A, 88W, TO220AB Min Qty: 1 | 0 |
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$0.8000 / $1.2000 | RFQ |
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DISTI #
STGP5H60DF
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Avnet Silica | Trans IGBT Chip N-CH 600V 10A 3-Pin TO-220 Tube (Alt: STGP5H60DF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for STGP5H60DF
STGP5H60DF CAD Models
STGP5H60DF Part Data Attributes
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STGP5H60DF
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STGP5H60DF
STMicroelectronics
Trench gate field-stop IGBT, H series 600 V, 5 A high speed
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | TO-220, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 10 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 6.9 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 88 W | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 280 ns | |
| Turn-on Time-Nom (ton) | 39 ns | |
| VCEsat-Max | 1.95 V |