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Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
45AC7596
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Newark | Igbt, Single, 600V, 80A, To-220Ab, Continuous Collector Current:80A, Collector Emitter Saturation Voltage:1.8V, Power Dissipation:283W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:175°C Rohs Compliant: Yes |Stmicroelectronics STGP40V60F Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 327 |
|
$1.7400 | Buy Now |
DISTI #
497-13872-5-ND
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DigiKey | IGBT 600V 80A 283W TO220AB Min Qty: 1 Lead time: 52 Weeks Container: Tube |
808 In Stock |
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$2.0063 / $3.3200 | Buy Now |
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STMicroelectronics | Trench gate field-stop IGBT, V series 600 V, 40 A very high speed RoHS: Compliant Min Qty: 1 | 0 |
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$2.1500 / $3.4100 | Buy Now |
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Future Electronics | STGP40V60F Series 600 V 40 A Very High Speed Trench Gate Field-Stop IGBT -TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Tube | 0Tube |
|
$1.7700 / $1.8100 | Buy Now |
DISTI #
80316325
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Verical | Trans IGBT Chip N-CH 600V 80A 62.5W 3-Pin(3+Tab) TO-220AB Tube Min Qty: 29 Package Multiple: 1 | Americas - 327 |
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$2.3630 / $2.6224 | Buy Now |
DISTI #
STGP40V60F
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TME | Transistor: IGBT, 600V, 40A, TO220AB Min Qty: 1 | 0 |
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$2.2200 / $3.7300 | RFQ |
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STGP40V60F
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STGP40V60F
STMicroelectronics
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | TO-220, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 80 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE | |
Gate-Emitter Thr Voltage-Max | 7 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 283 W | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 241 ns | |
Turn-on Time-Nom (ton) | 73 ns | |
VCEsat-Max | 2.3 V |