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Trench gate field-stop IGBT M series, 650 V 20 A low loss
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-17909-ND
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DigiKey | IGBT TRENCH FS 650V 40A TO220 Min Qty: 1 Lead time: 15 Weeks Container: Tube |
873 In Stock |
|
$0.9339 / $3.0400 | Buy Now |
DISTI #
STGP20M65DF2
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Avnet Americas | STMSTGP20M65DF2 - Bulk (Alt: STGP20M65DF2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Container: Bulk | 0 |
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$0.9050 / $0.9524 | Buy Now |
DISTI #
511-STGP20M65DF2
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Mouser Electronics | IGBTs Trench gate field-stop IGBT M series, 650 V 20 A low loss RoHS: Compliant | 2000 |
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$0.9330 / $2.2300 | Buy Now |
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STMicroelectronics | Trench gate field-stop IGBT M series, 650 V 20 A low loss RoHS: Compliant Min Qty: 1 | 2000 |
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$1.0000 / $2.1900 | Buy Now |
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Future Electronics | IGBT TRENCH 650V 40A TO220 RoHS: Not Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks | 0 |
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$0.9970 | Buy Now |
DISTI #
STGP20M65DF2
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TME | Transistor: IGBT, 650V, 20A, 166W, TO220AB Min Qty: 1 | 0 |
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$1.2200 / $2.0400 | RFQ |
DISTI #
STGP20M65DF2
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Avnet Silica | STMSTGP20M65DF2 (Alt: STGP20M65DF2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks, 0 Days | Silica - 2600 |
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Buy Now | |
DISTI #
STGP20M65DF2
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EBV Elektronik | STMSTGP20M65DF2 (Alt: STGP20M65DF2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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STGP20M65DF2
STMicroelectronics
Buy Now
Datasheet
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STGP20M65DF2
STMicroelectronics
Trench gate field-stop IGBT M series, 650 V 20 A low loss
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | TO-220, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 15 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 40 A | |
Collector-Emitter Voltage-Max | 650 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 7 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 252 ns | |
Turn-on Time-Nom (ton) | 39.6 ns | |
VCEsat-Max | 2 V |