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Transistors / IGBTs / STGP10NB60SD
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STGP10NB60SD by: STMicroelectronics

16 A, 600 V low drop IGBT with soft and fast recovery diode

Part Details for STGP10NB60SD by STMicroelectronics

Results Overview of STGP10NB60SD by STMicroelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

STGP10NB60SD Information

STGP10NB60SD by STMicroelectronics is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STGP10NB60SD

Part # Distributor Description Stock Price Buy
DISTI # 57P0967
Newark Igbt |Stmicroelectronics STGP10NB60SD RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 497-STGP10NB60SD-ND
DigiKey IGBT 600V 29A TO-220 Min Qty: 1 Lead time: 14 Weeks Container: Tube 844
In Stock
  • 1 $3.1000
  • 50 $1.5458
  • 100 $1.3948
  • 500 $1.1299
  • 1,000 $1.0449
  • 2,000 $0.9733
  • 5,000 $0.9587
$0.9587 / $3.1000 Buy Now
DISTI # STGP10NB60SD
Avnet Americas Trans IGBT Chip N-CH 600V 29A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STGP10NB60SD) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Tube 0
  • 1,000 $0.9801
  • 2,000 $0.9648
  • 4,000 $0.9469
  • 6,000 $0.9297
  • 8,000 $0.9166
$0.9166 / $0.9801 Buy Now
DISTI # STGP10NB60SD
Avnet Americas Trans IGBT Chip N-CH 600V 29A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STGP10NB60SD) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Tube 0
  • 1,000 $0.9801
  • 2,000 $0.9648
  • 4,000 $0.9469
  • 6,000 $0.9297
  • 8,000 $0.9166
$0.9166 / $0.9801 Buy Now
DISTI # 511-STGP10NB60SD
Mouser Electronics IGBTs N-Ch 600 V 10 A Low Drop PowerMESH RoHS: Compliant 854
  • 1 $2.8400
  • 10 $1.4700
  • 100 $1.3400
  • 500 $1.1200
  • 1,000 $1.0400
  • 2,000 $0.9690
  • 5,000 $0.9580
$0.9580 / $2.8400 Buy Now
STMicroelectronics 16 A, 600 V low drop IGBT with soft and fast recovery diode RoHS: Compliant Min Qty: 1 854
  • 1 $2.7800
  • 10 $1.4400
  • 100 $1.3100
  • 250 $1.3100
  • 500 $1.1000
$1.1000 / $2.7800 Buy Now
Future Electronics 16 A 600 V Low Drop IGBT with soft and Fast Recovery Diode - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 14 Weeks Container: Tube 0
Tube
  • 50 $1.0600
  • 200 $1.0500
  • 750 $1.0300
  • 1,250 $1.0200
  • 2,500 $1.0100
$1.0100 / $1.0600 Buy Now
Bristol Electronics   26
RFQ
DISTI # STGP10NB60SD
TME Transistor: IGBT, 600V, 16A, 80W, TO220AB Min Qty: 1 0
  • 1 $2.3400
  • 3 $2.1000
  • 10 $1.9500
  • 50 $1.8700
  • 150 $1.6700
  • 500 $1.5600
  • 1,000 $1.5100
  • 2,000 $1.4500
  • 6,000 $1.4000
$1.4000 / $2.3400 RFQ
ComSIT USA Electronic Component RoHS: Compliant Stock DE - 0
Stock ES - 15
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # STGP10NB60SD
Avnet Silica Trans IGBT Chip NCH 600V 29A 3Pin3Tab TO220 Tube (Alt: STGP10NB60SD) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days Silica - 0
Buy Now
DISTI # STGP10NB60SD
EBV Elektronik Trans IGBT Chip NCH 600V 29A 3Pin3Tab TO220 Tube (Alt: STGP10NB60SD) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STGP10NB60SD

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STGP10NB60SD Part Data Attributes

Parametric Data
STGP10NB60SD STMicroelectronics
Buy Now Datasheet
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STGP10NB60SD STMicroelectronics 16 A, 600 V low drop IGBT with soft and fast recovery diode
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-220AB
Package Description ROHS COMPLIANT, TO-220, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Samacsys Manufacturer STMicroelectronics
Case Connection COLLECTOR
Collector Current-Max (IC) 29 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 31.5 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 3100 ns
Turn-on Time-Nom (ton) 1160 ns

STGP10NB60SD Related Parts

STGP10NB60SD Frequently Asked Questions (FAQ)

  • The maximum junction temperature that the STGP10NB60SD can withstand is 150°C.

  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, the device should be mounted on a PCB with a thermal vias to dissipate heat efficiently.

  • The recommended gate resistor value for the STGP10NB60SD is between 10Ω and 100Ω, depending on the specific application and switching frequency.

  • Yes, the STGP10NB60SD is suitable for high-reliability applications due to its robust design and manufacturing process. However, it is essential to follow proper design and assembly guidelines to ensure the device operates within its specifications.

  • To protect the STGP10NB60SD from ESD, it is recommended to handle the device in an ESD-controlled environment, use ESD-protective packaging, and follow proper handling and assembly procedures.