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Transistors / IGBTs / STGP10M65DF2
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STGP10M65DF2 by: STMicroelectronics

Trench gate field-stop IGBT M series, 650 V 10 A low loss

Part Details for STGP10M65DF2 by STMicroelectronics

Results Overview of STGP10M65DF2 by STMicroelectronics

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

STGP10M65DF2 Information

STGP10M65DF2 by STMicroelectronics is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STGP10M65DF2

Part # Distributor Description Stock Price Buy
DISTI # 52Y7735
Newark Igbt, Single, 650V, 20A, To-220, Continuous Collector Current:20A, Collector Emitter Saturation Vo... ltage:1.55V, Power Dissipation:115W, Collector Emitter Voltage Max:650V, No. Of Pins:3Pins, Operating Temperature Max:175°C Rohs Compliant: Yes |Stmicroelectronics STGP10M65DF2 more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 764
  • 1 $1.6700
  • 10 $1.4200
  • 100 $1.2500
  • 500 $1.1800
  • 1,000 $1.1100
  • 3,000 $0.8700
$0.8700 / $1.6700 Buy Now
DISTI # 497-15840-5-ND
DigiKey IGBT TRENCH FS 650V 20A TO-220 Min Qty: 1 Lead time: 15 Weeks Container: Tube Temporarily Out of Stock
  • 1 $1.9800
  • 10 $1.2630
  • 100 $0.8523
  • 500 $0.6766
  • 1,000 $0.6201
  • 2,000 $0.5725
  • 6,000 $0.5176
$0.5176 / $1.9800 Buy Now
DISTI # STGP10M65DF2
Avnet Americas Trans IGBT Chip N-CH 650V 20A 3-Pin TO-220AB Tube - Rail/Tube (Alt: STGP10M65DF2) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Container: Tube 0
  • 2,000 $0.5242
  • 4,000 $0.5209
  • 6,000 $0.5112
  • 10,000 $0.5019
  • 20,000 $0.4930
$0.4930 / $0.5242 Buy Now
DISTI # 511-STGP10M65DF2
Mouser Electronics IGBTs Trench gate field-stop IGBT M series, 650 V 10 A low loss RoHS: Compliant 702
  • 1 $1.7100
  • 10 $1.2900
  • 100 $0.8790
  • 500 $0.7450
  • 1,000 $0.6200
  • 2,000 $0.5700
  • 5,000 $0.5170
$0.5170 / $1.7100 Buy Now
STMicroelectronics Trench gate field-stop IGBT M series, 650 V 10 A low loss RoHS: Compliant Min Qty: 1 702
  • 1 $1.6800
  • 10 $1.2600
  • 25 $1.2600
  • 100 $0.8600
  • 250 $0.8600
  • 500 $0.7300
$0.7300 / $1.6800 Buy Now
DISTI # STGP10M65DF2
TME Transistor: IGBT, 650V, 10A, 115W, TO220AB Min Qty: 1 71
  • 1 $1.1000
  • 10 $0.9900
  • 50 $0.8800
  • 100 $0.8400
  • 500 $0.8300
$0.8300 / $1.1000 Buy Now
ComSIT USA TRENCH GATE FIELD-STOP IGBT, M SERIES 650 V, 10 A LOW LOSS Insulated Gate Bipolar Transistor, 20A I(... C), 650V V(BR)CES, N-Channel, TO-220AB more ECCN: EAR99 RoHS: Compliant Stock DE - 1900
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # STGP10M65DF2
IBS Electronics TRENCH GATE FIELD-STOP IGBT M SERIES 650 V 10 A LOW LOSS Min Qty: 2000 Package Multiple: 1 0
  • 2,000 $0.7248
  • 2,000 $0.7182
  • 3,000 $0.7116
  • 4,000 $0.7049
  • 5,000 $0.6916
$0.6916 / $0.7248 Buy Now
DISTI # STGP10M65DF2
Avnet Silica Trans IGBT Chip NCH 650V 20A 3Pin TO220AB Tube (Alt: STGP10M65DF2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks, 0 Days Silica - 900
Buy Now
DISTI # STGP10M65DF2
Avnet Silica Trans IGBT Chip NCH 650V 20A 3Pin TO220AB Tube (Alt: STGP10M65DF2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks, 0 Days Silica - 800
Buy Now
DISTI # STGP10M65DF2
EBV Elektronik Trans IGBT Chip NCH 650V 20A 3Pin TO220AB Tube (Alt: STGP10M65DF2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now
Vyrian Transistors 344
RFQ

Part Details for STGP10M65DF2

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STGP10M65DF2 Part Data Attributes

Parametric Data
STGP10M65DF2 STMicroelectronics
Buy Now Datasheet
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STGP10M65DF2 STMicroelectronics Trench gate field-stop IGBT M series, 650 V 10 A low loss
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Package Description TO-220, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 15 Weeks
Samacsys Manufacturer STMicroelectronics
Case Connection COLLECTOR
Collector Current-Max (IC) 20 A
Collector-Emitter Voltage-Max 650 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 7 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 115 W
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 260 ns
Turn-on Time-Nom (ton) 27 ns
VCEsat-Max 2 V

STGP10M65DF2 Related Parts

STGP10M65DF2 Frequently Asked Questions (FAQ)

  • The maximum junction temperature that the STGP10M65DF2 can withstand is 150°C.

  • To ensure reliability, it is recommended to follow the recommended operating conditions, use a suitable heat sink, and ensure good thermal management.

  • The recommended gate resistor value for the STGP10M65DF2 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.

  • Yes, the STGP10M65DF2 is suitable for high-frequency applications up to 100 kHz, but it's recommended to consult the datasheet and application notes for specific guidance.

  • To protect the STGP10M65DF2 from overvoltage and overcurrent, it is recommended to use a suitable voltage regulator, overvoltage protection circuit, and current limiting resistors.