Part Details for STGFW30V60F by STMicroelectronics
Overview of STGFW30V60F by STMicroelectronics
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for STGFW30V60F
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
06X3594
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Newark | Igbt |Stmicroelectronics STGFW30V60F Min Qty: 600 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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STMicroelectronics | Trench gate field-stop IGBT, V series 600 V, 30 A very high speed RoHS: Compliant Min Qty: 1 | 837 |
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$1.6500 / $2.6900 | Buy Now |
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Bristol Electronics | 292 |
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RFQ |
Part Details for STGFW30V60F
STGFW30V60F CAD Models
STGFW30V60F Part Data Attributes
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STGFW30V60F
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STGFW30V60F
STMicroelectronics
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 60 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Gate-Emitter Thr Voltage-Max | 7 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 58 W | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 225 ns | |
| Turn-on Time-Nom (ton) | 59 ns | |
| VCEsat-Max | 2.3 V |