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Part Details for STGF30H65DFB2 by STMicroelectronics
Overview of STGF30H65DFB2 by STMicroelectronics
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for STGF30H65DFB2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
82AH9141
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Newark | Igbt, 650V, 50A, 50W, To-220Fp Rohs Compliant: Yes |Stmicroelectronics STGF30H65DFB2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$1.4200 | Buy Now |
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DISTI #
497-STGF30H65DFB2-ND
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DigiKey | DISCRETE Min Qty: 1000 Lead time: 15 Weeks Container: Bulk | Temporarily Out of Stock |
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$0.9492 | Buy Now |
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DISTI #
STGF30H65DFB2
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Avnet Americas | Transistor IGBT Chip N-Channel 650V 30A 3-Pin TO-220FP Tube - Rail/Tube (Alt: STGF30H65DFB2) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
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RFQ | |
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DISTI #
511-STGF30H65DFB2
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Mouser Electronics | IGBTs Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT RoHS: Compliant | 0 |
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$0.8790 | Order Now |
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STMicroelectronics | Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a TO-220FP package RoHS: Compliant Min Qty: 1 | 0 |
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$1.0900 / $1.9900 | Buy Now |
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Future Electronics | Trench gate field-stop 650 V, 30 A high speed HB2 IGBT, TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks Container: Tube | 1000Tube |
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$0.8600 / $1.0200 | Buy Now |
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DISTI #
STGF30H65DFB2
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TME | Transistor: IGBT, 650V, 30A, 50W, TO220FP Min Qty: 1 | 0 |
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$1.3000 / $2.1800 | RFQ |
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DISTI #
STGF30H65DFB2
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Avnet Silica | Transistor IGBT Chip N-Channel 650V 30A 3-Pin TO-220FP Tube (Alt: STGF30H65DFB2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
STGF30H65DFB2
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EBV Elektronik | Transistor IGBT Chip N-Channel 650V 30A 3-Pin TO-220FP Tube (Alt: STGF30H65DFB2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for STGF30H65DFB2
STGF30H65DFB2 CAD Models
STGF30H65DFB2 Part Data Attributes
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STGF30H65DFB2
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STGF30H65DFB2
STMicroelectronics
Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a TO-220FP package
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | TO-220FP, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Date Of Intro | 2020-05-25 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 50 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 7 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 184 ns | |
| Turn-on Time-Nom (ton) | 27.5 ns | |
| VCEsat-Max | 2.1 V |