Datasheets
STGB6M65DF2 by: STMicroelectronics

Trench gate field-stop IGBT M series, 650 V 6 A low loss

Part Details for STGB6M65DF2 by STMicroelectronics

Overview of STGB6M65DF2 by STMicroelectronics

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Applications Energy and Power Systems Renewable Energy

Price & Stock for STGB6M65DF2

Part # Distributor Description Stock Price Buy
DISTI # 20AC4195
Newark Igbt |Stmicroelectronics STGB6M65DF2 Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 497-STGB6M65DF2CT-ND
DigiKey IGBT TRENCH 650V 12A D2PAK Min Qty: 1 Lead time: 15 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 2000
In Stock
  • 1 $1.5200
  • 10 $1.2410
  • 100 $0.9651
  • 500 $0.8180
  • 1,000 $0.6663
  • 2,000 $0.6273
  • 6,000 $0.5974
  • 10,000 $0.5698
$0.5698 / $1.5200 Buy Now
DISTI # STGB6M65DF2
Avnet Americas STMSTGB6M65DF2 - Bulk (Alt: STGB6M65DF2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Lead time: 54 Weeks, 0 Days Container: Bulk 0
  • 1,000 $0.6757
  • 1,100 $0.6620
  • 2,100 $0.6484
  • 5,000 $0.6347
  • 10,000 $0.6211
  • 50,000 $0.6074
  • 100,000 $0.5938
$0.5938 / $0.6757 Buy Now
DISTI # 511-STGB6M65DF2
Mouser Electronics IGBT Transistors Trench gate field-stop IGBT M series, 650 V 6 A low loss RoHS: Compliant 65
  • 1 $1.5200
  • 10 $1.2400
  • 100 $0.9660
  • 500 $0.8180
  • 1,000 $0.6660
  • 2,000 $0.6270
  • 5,000 $0.5970
  • 10,000 $0.5690
$0.5690 / $1.5200 Buy Now
STMicroelectronics Trench gate field-stop IGBT M series, 650 V 6 A low loss RoHS: Compliant Min Qty: 1 65
  • 1 $1.4900
  • 10 $1.2200
  • 100 $0.9500
  • 500 $0.8000
$0.8000 / $1.4900 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 1000 0
  • 2,000 $0.6070
$0.6070 Buy Now
DISTI # STGB6M65DF2
Avnet Americas STMSTGB6M65DF2 - Bulk (Alt: STGB6M65DF2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Lead time: 54 Weeks, 0 Days Container: Bulk 0
  • 1,000 $0.6757
  • 1,100 $0.6620
  • 2,100 $0.6484
  • 5,000 $0.6347
  • 10,000 $0.6211
  • 50,000 $0.6074
  • 100,000 $0.5938
$0.5938 / $0.6757 Buy Now
DISTI # STGB6M65DF2
TME Transistor: IGBT, 650V, 6A, 88W, D2PAK Min Qty: 1 0
  • 1 $1.1700
  • 5 $1.0700
  • 25 $0.9800
  • 100 $0.9400
  • 500 $0.8400
  • 1,000 $0.7800
  • 2,000 $0.7300
  • 6,000 $0.7100
$0.7100 / $1.1700 RFQ
Ameya Holding Limited   2000
RFQ
DISTI # STGB6M65DF2
Avnet Silica STMSTGB6M65DF2 (Alt: STGB6M65DF2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Silica - 5000
Buy Now
DISTI # STGB6M65DF2
EBV Elektronik STMSTGB6M65DF2 (Alt: STGB6M65DF2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STGB6M65DF2

STGB6M65DF2 CAD Models

STGB6M65DF2 Part Data Attributes:

STGB6M65DF2 STMicroelectronics
Buy Now Datasheet
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STGB6M65DF2 STMicroelectronics Trench gate field-stop IGBT M series, 650 V 6 A low loss
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Package Description TO-263, D2PAK-3/2
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 54 Weeks
Samacsys Manufacturer STMicroelectronics
Case Connection COLLECTOR
Collector Current-Max (IC) 12 A
Collector-Emitter Voltage-Max 650 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 7 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 88 W
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 291 ns
Turn-on Time-Nom (ton) 24 ns
VCEsat-Max 2 V

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