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Part Details for STGB30V60F by STMicroelectronics
Overview of STGB30V60F by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Motor control systems
Price & Stock for STGB30V60F
| Part # | Distributor | Description | Stock | Price | Buy | |
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STMicroelectronics | Trench gate field-stop IGBT, V series 600 V, 30 A very high speed RoHS: Compliant Min Qty: 1 | 0 |
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$1.5000 / $2.5300 | Buy Now |
Part Details for STGB30V60F
STGB30V60F CAD Models
STGB30V60F Part Data Attributes
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STGB30V60F
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STGB30V60F
STMicroelectronics
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 60 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Gate-Emitter Thr Voltage-Max | 7 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 260 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 225 ns | |
| Turn-on Time-Nom (ton) | 59 ns | |
| VCEsat-Max | 2.3 V |