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Part Details for STGB20H65DFB2 by STMicroelectronics
Overview of STGB20H65DFB2 by STMicroelectronics
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for STGB20H65DFB2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
89AH1339
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Newark | Igbt, 650V, 40A, To-263/D2Pak Rohs Compliant: Yes |Stmicroelectronics STGB20H65DFB2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$1.4000 | Buy Now |
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DISTI #
497-STGB20H65DFB2CT-ND
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DigiKey | TRENCH GATE FIELD-STOP 650 V, 20 Min Qty: 1 Lead time: 15 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
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$0.7811 / $2.6700 | Buy Now |
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DISTI #
STGB20H65DFB2
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Avnet Americas | Transistor IGBT Chip N-Channel 650V 20A 3-Pin D2PAK T/R - Tape and Reel (Alt: STGB20H65DFB2) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$0.7592 / $0.8124 | Buy Now |
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DISTI #
511-STGB20H65DFB2
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Mouser Electronics | IGBTs Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT RoHS: Compliant | 0 |
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$0.7810 / $0.8110 | Order Now |
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STMicroelectronics | Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a D2PAK package RoHS: Compliant Min Qty: 1 | 0 |
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$0.8600 / $1.9700 | Buy Now |
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Future Electronics | IGBT Transistors Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks Container: Reel | 0Reel |
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$0.7650 / $0.8250 | Buy Now |
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DISTI #
STGB20H65DFB2
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TME | Transistor: IGBT, 650V, 25A, 147W, D2PAK Min Qty: 1 | 0 |
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$1.2100 / $2.0300 | RFQ |
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DISTI #
STGB20H65DFB2
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Avnet Silica | Transistor IGBT Chip N-Channel 650V 20A 3-Pin D2PAK T/R (Alt: STGB20H65DFB2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
STGB20H65DFB2
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EBV Elektronik | Transistor IGBT Chip N-Channel 650V 20A 3-Pin D2PAK T/R (Alt: STGB20H65DFB2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for STGB20H65DFB2
STGB20H65DFB2 CAD Models
STGB20H65DFB2 Part Data Attributes
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STGB20H65DFB2
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STGB20H65DFB2
STMicroelectronics
Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a D2PAK package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | TO-263, D2PAK-3/2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Date Of Intro | 2020-05-07 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 40 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 7 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 147 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 178 ns | |
| Turn-on Time-Nom (ton) | 26 ns | |
| VCEsat-Max | 2.1 V |