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600 V, 20 A high speed trench gate field-stop IGBT
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
26Y5767
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Newark | Igbt |Stmicroelectronics STGB20H60DF RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
DISTI #
497-15117-1-ND
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DigiKey | IGBT 600V 40A 167W D2PAK Min Qty: 1 Lead time: 15 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Temporarily Out of Stock |
|
$0.8730 / $2.9000 | Buy Now |
DISTI #
STGB20H60DF
|
Avnet Americas | Trans IGBT Chip N-CH 600V 40A 3-Pin D2PAK T/R - Tape and Reel (Alt: STGB20H60DF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
|
$0.8486 / $0.9079 | Buy Now |
DISTI #
511-STGB20H60DF
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Mouser Electronics | IGBTs 600 V, 20 A high speed trench gate field-stop IGBT RoHS: Compliant | 1080 |
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$0.8730 / $2.4300 | Buy Now |
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Future Electronics | IGBT 600V 40A 167W D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks Container: Reel | 0Reel |
|
$0.8550 / $0.9250 | Buy Now |
|
Future Electronics | IGBT 600V 40A 167W D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks Container: Reel | 0Reel |
|
$0.8550 / $0.9250 | Buy Now |
DISTI #
STGB20H60DF
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TME | Transistor: IGBT, 600V, 20A, 167W, D2PAK Min Qty: 1 | 0 |
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$1.3500 / $2.2600 | RFQ |
DISTI #
STGB20H60DF
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Avnet Silica | Trans IGBT Chip N-CH 600V 40A 3-Pin D2PAK T/R (Alt: STGB20H60DF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days | Silica - 0 |
|
Buy Now | |
DISTI #
STGB20H60DF
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EBV Elektronik | Trans IGBT Chip N-CH 600V 40A 3-Pin D2PAK T/R (Alt: STGB20H60DF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
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|
STGB20H60DF
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STGB20H60DF
STMicroelectronics
600 V, 20 A high speed trench gate field-stop IGBT
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | TO-263, D2PAK-3/2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 15 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 40 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 7 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 167 W | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 259 ns | |
Turn-on Time-Nom (ton) | 55.9 ns | |
VCEsat-Max | 2 V |