Part Details for STGB10NB60ST4 by STMicroelectronics
Overview of STGB10NB60ST4 by STMicroelectronics
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for STGB10NB60ST4
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 100 |
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RFQ | ||
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Quest Components | 80 |
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$1.0675 / $2.1350 | Buy Now | |
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Chip1Cloud | IGBT 600V 29A 80W D2PAK | 22000 |
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RFQ |
Part Details for STGB10NB60ST4
STGB10NB60ST4 CAD Models
STGB10NB60ST4 Part Data Attributes
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STGB10NB60ST4
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STGB10NB60ST4
STMicroelectronics
29A, 600V, N-CHANNEL IGBT, TO-263AB, ROHS COMPLIANT, TO-263, DPAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | D2PAK | |
Package Description | ROHS COMPLIANT, TO-263, DPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 29 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE | |
Gate-Emitter Thr Voltage-Max | 5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 80 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 3100 ns | |
Turn-on Time-Nom (ton) | 1160 ns |