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N-channel 650 V, 0.35 Ohm typ., 12 A MDmesh II Power MOSFET in TO-220FP ultra narrow leads package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-16109-5-ND
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DigiKey | MOSFET N-CH 650V 12A TO220FP Min Qty: 1 Lead time: 14 Weeks Container: Tube |
466 In Stock |
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$2.1362 / $4.3900 | Buy Now |
DISTI #
STFU15NM65N
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Avnet Americas | POWER MOSFET - Rail/Tube (Alt: STFU15NM65N) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
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$2.1397 / $2.4348 | Buy Now |
DISTI #
511-STFU15NM65N
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Mouser Electronics | MOSFET N-channel 650 V, 0.35 Ohm typ 12 A MDmesh II Power MOSFET in TO-220FP ultra narr RoHS: Compliant | 183 |
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$2.1300 / $4.3900 | Buy Now |
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STMicroelectronics | N-channel 650 V, 0.35 Ohm typ., 12 A MDmesh II Power MOSFET in TO-220FP ultra narrow leads package RoHS: Compliant Min Qty: 1 | 183 |
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$2.6000 / $4.3000 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 | 0 |
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$2.1900 | Buy Now |
DISTI #
STFU15NM65N
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Avnet Silica | POWER MOSFET (Alt: STFU15NM65N) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
STFU15NM65N
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EBV Elektronik | POWER MOSFET (Alt: STFU15NM65N) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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STFU15NM65N
STMicroelectronics
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Datasheet
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STFU15NM65N
STMicroelectronics
N-channel 650 V, 0.35 Ohm typ., 12 A MDmesh II Power MOSFET in TO-220FP ultra narrow leads package
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Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 187 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 0.38 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 48 A | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STFU15NM65N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STFU15NM65N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SPA11N60C3XKSA1 | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN | Infineon Technologies AG | STFU15NM65N vs SPA11N60C3XKSA1 |
TK12A60U(Q) | MOSFET N-CH 600V 12A SC-67 | Toshiba America Electronic Components | STFU15NM65N vs TK12A60U(Q) |
KP11N60F | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220IS, 3 PIN | KEC | STFU15NM65N vs KP11N60F |
LSD11N65E | Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | Xi’an Lonten Renewable Energy Technology Inc | STFU15NM65N vs LSD11N65E |
SIHA12N60E-E3 | Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Vishay Intertechnologies | STFU15NM65N vs SIHA12N60E-E3 |
R6011ENX | Power Field-Effect Transistor, 11A I(D), 600V, 0.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN | ROHM Semiconductor | STFU15NM65N vs R6011ENX |
SIHF12N65E-GE3 | Power Field-Effect Transistor, 12A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, FULLPAK-3 | Vishay Intertechnologies | STFU15NM65N vs SIHF12N65E-GE3 |
STF14NM65N | N-channel 650 V, 0.33 Ohm, 12 A MDmesh(TM) II Power MOSFET TO-220FP | STMicroelectronics | STFU15NM65N vs STF14NM65N |
SSF11NS60F | Power Field-Effect Transistor, 11A I(D), 600V, 0.41ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN | Suzhou Good-Ark Electronics Co Ltd | STFU15NM65N vs SSF11NS60F |
SPA11N65C3XKSA1 | Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN | Infineon Technologies AG | STFU15NM65N vs SPA11N65C3XKSA1 |