Part Details for STF26NM60ND by STMicroelectronics
Results Overview of STF26NM60ND by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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STF26NM60ND Information
STF26NM60ND by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STF26NM60ND
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70547934
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RS | STF26NM60ND N-channel MOSFET Transistor, 21 A, 650 V, 3-Pin TO-220FP Min Qty: 25 Package Multiple: 1 Container: Bulk | 0 |
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$4.2000 / $5.2400 | RFQ |
|
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Vyrian | Transistors | 664 |
|
RFQ |
Part Details for STF26NM60ND
STF26NM60ND CAD Models
STF26NM60ND Part Data Attributes
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STF26NM60ND
STMicroelectronics
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Datasheet
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STF26NM60ND
STMicroelectronics
N-channel 600 V, 0.145 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | TO-220FP, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 21 A | |
| Drain-source On Resistance-Max | 0.175 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 35 W | |
| Pulsed Drain Current-Max (IDM) | 84 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
STF26NM60ND Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STF26NM60ND is -40°C to 150°C.
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To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow management.
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The recommended gate drive voltage for the STF26NM60ND is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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To protect the STF26NM60ND from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a conductive container or bag.
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The maximum allowed current for the STF26NM60ND is 26A, with a maximum pulsed current of 52A.