Datasheets
STF18N60M6 by: STMicroelectronics

N-channel 600 V, 230 mOhm typ., 13 A MDmesh M6 Power MOSFET in a TO-220FP package

Part Details for STF18N60M6 by STMicroelectronics

Results Overview of STF18N60M6 by STMicroelectronics

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Applications Industrial Automation Automotive Motor control systems

STF18N60M6 Information

STF18N60M6 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STF18N60M6

Part # Distributor Description Stock Price Buy
DISTI # 47AK6946
Newark Mosfet, N-Ch, 600V, 13A, To-220Fp, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continu... ous Drain Current Id:13A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STF18N60M6 more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 1845
  • 1 $1.0900
  • 10 $1.0900
  • 100 $1.0900
  • 500 $1.0900
  • 1,000 $1.0900
  • 3,000 $1.0900
  • 5,000 $1.0900
$1.0900 Buy Now
DISTI # 497-19057-ND
DigiKey MOSFET N-CH 600V 13A TO220FP Min Qty: 1 Lead time: 14 Weeks Container: Tube 17
In Stock
  • 1 $2.7500
  • 50 $1.3412
  • 100 $1.2446
  • 500 $0.9962
  • 1,000 $0.9192
  • 2,000 $0.8544
  • 5,000 $0.8250
$0.8250 / $2.7500 Buy Now
DISTI # 47AK6946
Avnet Americas N-Channel Power MOSFET 600V 13A 3-Pin TO-220FP T/R - Bulk (Alt: 47AK6946) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 378 Partner Stock
  • 1 $2.8500
  • 10 $1.6400
  • 100 $1.6100
  • 500 $1.3000
  • 1,000 $1.2200
$1.2200 / $2.8500 Buy Now
DISTI # STF18N60M6
Avnet Americas N-Channel Power MOSFET 600V 13A 3-Pin TO-220FP T/R - Rail/Tube (Alt: STF18N60M6) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Tube 0
  • 1,000 $0.8686
  • 2,000 $0.8482
  • 4,000 $0.8439
  • 6,000 $0.8396
  • 8,000 $0.8352
$0.8352 / $0.8686 Buy Now
DISTI # 511-STF18N60M6
Mouser Electronics MOSFETs N-channel 600 V, 230 mOhm typ 13 A MDmesh M6 Power MOSFET RoHS: Compliant 323
  • 1 $2.7000
  • 10 $1.3600
  • 100 $1.2700
  • 500 $0.9830
  • 1,000 $0.8960
  • 2,000 $0.8540
  • 5,000 $0.8340
$0.8340 / $2.7000 Buy Now
STMicroelectronics N-channel 600 V, 230 mOhm typ., 13 A MDmesh M6 Power MOSFET in a TO-220FP package RoHS: Compliant Min Qty: 1 323
  • 1 $2.6500
  • 10 $1.3300
  • 100 $1.2500
  • 250 $1.2500
  • 500 $0.9600
$0.9600 / $2.6500 Buy Now
Future Electronics MOSFET 600V 0.28 OHM RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 14 Weeks Container: Tube 0
Tube
  • 50 $0.9200
  • 200 $0.8950
  • 750 $0.8700
  • 1,250 $0.8600
  • 2,500 $0.8300
$0.8300 / $0.9200 Buy Now
DISTI # STF18N60M6
TME Transistor: N-MOSFET, MDmesh™ M6, unipolar, 600V, 8.2A, Idm: 38A Min Qty: 1 40
  • 1 $1.8500
  • 10 $1.6700
  • 50 $1.4100
  • 100 $1.2800
  • 500 $1.0400
  • 1,000 $1.0300
$1.0300 / $1.8500 Buy Now
DISTI # STF18N60M6
Avnet Silica NChannel Power MOSFET 600V 13A 3Pin TO220FP TR (Alt: STF18N60M6) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days Silica - 700
Buy Now
DISTI # STF18N60M6
EBV Elektronik NChannel Power MOSFET 600V 13A 3Pin TO220FP TR (Alt: STF18N60M6) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STF18N60M6

STF18N60M6 CAD Models

STF18N60M6 Part Data Attributes

STF18N60M6 STMicroelectronics
Buy Now Datasheet
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STF18N60M6 STMicroelectronics N-channel 600 V, 230 mOhm typ., 13 A MDmesh M6 Power MOSFET in a TO-220FP package
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

STF18N60M6 Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the STF18N60M6 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's maximum junction temperature, voltage, and current ratings. It's recommended to consult with STMicroelectronics' application notes or contact their support team for more information.

  • To ensure proper cooling, consider the device's thermal resistance (RthJA) and maximum junction temperature (Tjmax). Use a heat sink with a sufficient thermal conductivity and surface area to dissipate heat effectively. Also, ensure good thermal contact between the device and heat sink using thermal interface materials. Finally, consider the airflow and ambient temperature in your design to ensure the device operates within its specified temperature range.

  • The recommended gate drive voltage for the STF18N60M6 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can reduce switching losses, but may also increase gate oxide stress. Consult the datasheet and application notes for more information on gate drive voltage selection.

  • Yes, the STF18N60M6 can be used in a parallel configuration to increase current handling, but it requires careful consideration of the device's characteristics and layout. Ensure that the devices are matched in terms of their electrical and thermal characteristics, and that the layout is designed to minimize current imbalance and thermal gradients. Consult STMicroelectronics' application notes and support team for more information on parallel configuration design.

  • The STF18N60M6 has an integrated ESD protection diode, but it's still important to follow proper ESD handling and protection procedures during manufacturing, assembly, and testing. Ensure that your design includes ESD protection devices and follows recommended ESD handling practices to prevent damage to the device.