Part Details for STE70NM50 by STMicroelectronics
Results Overview of STE70NM50 by STMicroelectronics
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STE70NM50 Information
STE70NM50 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STE70NM50
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 9 |
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RFQ | ||
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Quest Components | 7 |
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$38.6232 / $40.6560 | Buy Now | |
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Quest Components | 6 |
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$59.5508 / $62.6850 | Buy Now | |
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ComSIT USA | 500 V, 70 A, 0.045 OHM ISOTOP N CHANNEL ZENER, PROTECTED MDMESHPOWER MOSFET Power Field-Effect Trans... more ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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DISTI #
STE70NM50
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Avnet Silica | Trans MOSFET NCH 500V 70A 4Pin ISOTOP Tube (Alt: STE70NM50) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Vyrian | Transistors | 241 |
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RFQ |
Part Details for STE70NM50
STE70NM50 CAD Models
STE70NM50 Part Data Attributes
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STE70NM50
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STE70NM50
STMicroelectronics
N-Channel 500V - 0.045 Ohm - 70A - ISOTOP Zener-Protected MDmesh MOSFET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | ISOTOP | |
| Package Description | ISOTOP-4 | |
| Pin Count | 4 | |
| Manufacturer Package Code | ISOTOP | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 1400 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 70 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 460 W | |
| Pulsed Drain Current-Max (IDM) | 280 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STE70NM50
This table gives cross-reference parts and alternative options found for STE70NM50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STE70NM50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| STN2NE10 | STMicroelectronics | Check for Price | 2A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN | STE70NM50 vs STN2NE10 |
| FDT457N | onsemi | Check for Price | N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 60mΩ, SOT-223-4 / TO-261-4, 4000-REEL | STE70NM50 vs FDT457N |
| STE36N50 | STMicroelectronics | Check for Price | 36A, 500V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, POWER, ISOTOP-4 | STE70NM50 vs STE36N50 |
| STE45N50 | STMicroelectronics | Check for Price | 0.11ohm, Si, POWER, FET, POWER, ISOTOP-4 | STE70NM50 vs STE45N50 |
| FDT457N | Fairchild Semiconductor Corporation | Check for Price | N-Channel Enhancement Mode Field Effect Transistor, MOLDED PACKAGE, SOT-223, 4 LEAD, 4000/TAPE REEL | STE70NM50 vs FDT457N |
| STE36N50-DK | STMicroelectronics | Check for Price | 36A, 500V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, POWER, ISOTOP-4 | STE70NM50 vs STE36N50-DK |
| STN4NF03L | STMicroelectronics | $0.4305 | N-Channel 30V - 0.039 Ohm - 4A - SOT-223 STripFET(TM) POWER MOSFET | STE70NM50 vs STN4NF03L |
| STN4NF06L | STMicroelectronics | $0.5375 | Automotive-grade N-channel 60 V, 0.07 Ohm typ., 4 A STripFET II Power MOSFET in SOT-223 package | STE70NM50 vs STN4NF06L |
| FDT459N_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STE70NM50 vs FDT459N_NL |
| STE36N50A | STMicroelectronics | Check for Price | 36A, 500V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, POWER, ISOTOP-4 | STE70NM50 vs STE36N50A |
STE70NM50 Frequently Asked Questions (FAQ)
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STMicroelectronics provides a recommended PCB layout for the STE70NM50 in their application note AN5046, which includes guidelines for thermal vias, copper pours, and component placement to minimize thermal resistance and ensure reliable operation.
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To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and ambient temperature (Ta). Additionally, consider using thermal interface materials, such as thermal pads or thermal grease, to improve heat transfer between the device and the heat sink.
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The STE70NM50's high current handling requires careful PCB design consideration to prevent overheating, voltage drops, and electromagnetic interference (EMI). Ensure that the PCB traces are wide enough to handle the high currents, and consider using multiple layers or thick copper to reduce resistance and inductance.
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When selecting a heat sink for the STE70NM50, consider the device's power dissipation, ambient temperature, and airflow. A heat sink with a high thermal conductivity, such as copper or aluminum, and a large surface area is recommended. Additionally, ensure that the heat sink is properly attached to the device using a suitable thermal interface material.
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The STE70NM50 is a high-power device that can generate significant electromagnetic interference (EMI). To minimize EMI, use proper PCB layout techniques, such as separating high-current and low-current paths, using shielding, and adding EMI filters or chokes as needed. Additionally, ensure that the device is properly grounded and that the PCB is designed to minimize radiation.