Datasheets
STE30NK90Z by: STMicroelectronics

28A, 900V, 0.26ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, ISOTOP-4

Part Details for STE30NK90Z by STMicroelectronics

Results Overview of STE30NK90Z by STMicroelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

STE30NK90Z Information

STE30NK90Z by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STE30NK90Z

Part # Distributor Description Stock Price Buy
Quest Components POWER FIELD-EFFECT TRANSISTOR, 28A I(D), 900V, 0.26OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE S... EMICONDUCTOR FET more 30
  • 1 $18.5835
  • 28 $17.8688
$17.8688 / $18.5835 Buy Now
ComSIT USA N-CHANNEL 900V-0.21 OHM-28A ISOTOP ZENER-PROTECTED SUPERMESH MOSFET Power Field-Effect Transistor, 2... 8A I(D), 900V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET more ECCN: EAR99 RoHS: Compliant Stock DE - 20
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for STE30NK90Z

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STE30NK90Z Part Data Attributes

STE30NK90Z STMicroelectronics
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STE30NK90Z STMicroelectronics 28A, 900V, 0.26ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, ISOTOP-4
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code ISOTOP
Package Description ROHS COMPLIANT, ISOTOP-4
Pin Count 4
Manufacturer Package Code ISOTOP
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Additional Feature HIGH VOLTAGE
Avalanche Energy Rating (Eas) 500 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 900 V
Drain Current-Max (ID) 28 A
Drain-source On Resistance-Max 0.26 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 600 W
Pulsed Drain Current-Max (IDM) 112 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish NICKEL
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STE30NK90Z

This table gives cross-reference parts and alternative options found for STE30NK90Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STE30NK90Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
APT8030JVFR Microsemi Corporation Check for Price Power Field-Effect Transistor, 25A I(D), 800V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 STE30NK90Z vs APT8030JVFR
STE40NK90ZD STMicroelectronics Check for Price 40A, 900V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, ISOTOP-4 STE30NK90Z vs STE40NK90ZD

STE30NK90Z Related Parts

STE30NK90Z Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the STE30NK90Z is -40°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance and reliability.

  • To ensure proper cooling, use a heat sink with a thermal resistance of less than 1°C/W, and apply a thermal interface material (TIM) with a thermal conductivity of at least 5 W/mK. Also, ensure good airflow around the device.

  • The recommended gate drive voltage for the STE30NK90Z is between 10V and 15V, with a maximum gate-source voltage of ±20V. However, it's essential to check the specific application requirements and adjust the gate drive voltage accordingly.

  • To protect the STE30NK90Z from overvoltage and overcurrent, use a voltage regulator or a DC-DC converter with overvoltage protection (OVP) and overcurrent protection (OCP) features. Additionally, consider using a fuse or a current limiter in series with the device.

  • For optimal performance and reliability, use a 4-layer PCB with a solid ground plane, and ensure the device is placed close to the heat sink. Keep the high-frequency signals away from the device, and use a Kelvin connection for the gate and source pins.