Part Details for STE30NK90Z by STMicroelectronics
Results Overview of STE30NK90Z by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STE30NK90Z Information
STE30NK90Z by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STE30NK90Z
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 28A I(D), 900V, 0.26OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE S... more | 30 |
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$17.8688 / $18.5835 | Buy Now |
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ComSIT USA | N-CHANNEL 900V-0.21 OHM-28A ISOTOP ZENER-PROTECTED SUPERMESH MOSFET Power Field-Effect Transistor, 2... more ECCN: EAR99 RoHS: Compliant |
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RFQ |
Part Details for STE30NK90Z
STE30NK90Z CAD Models
STE30NK90Z Part Data Attributes
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STE30NK90Z
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STE30NK90Z
STMicroelectronics
28A, 900V, 0.26ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, ISOTOP-4
Select a part to compare: |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | ISOTOP | |
Package Description | ROHS COMPLIANT, ISOTOP-4 | |
Pin Count | 4 | |
Manufacturer Package Code | ISOTOP | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Additional Feature | HIGH VOLTAGE | |
Avalanche Energy Rating (Eas) | 500 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 900 V | |
Drain Current-Max (ID) | 28 A | |
Drain-source On Resistance-Max | 0.26 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PUFM-X4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 600 W | |
Pulsed Drain Current-Max (IDM) | 112 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | NICKEL | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for STE30NK90Z
This table gives cross-reference parts and alternative options found for STE30NK90Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STE30NK90Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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APT8030JVFR | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 25A I(D), 800V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | STE30NK90Z vs APT8030JVFR |
STE40NK90ZD | STMicroelectronics | Check for Price | 40A, 900V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, ISOTOP-4 | STE30NK90Z vs STE40NK90ZD |
STE30NK90Z Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STE30NK90Z is -40°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance and reliability.
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To ensure proper cooling, use a heat sink with a thermal resistance of less than 1°C/W, and apply a thermal interface material (TIM) with a thermal conductivity of at least 5 W/mK. Also, ensure good airflow around the device.
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The recommended gate drive voltage for the STE30NK90Z is between 10V and 15V, with a maximum gate-source voltage of ±20V. However, it's essential to check the specific application requirements and adjust the gate drive voltage accordingly.
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To protect the STE30NK90Z from overvoltage and overcurrent, use a voltage regulator or a DC-DC converter with overvoltage protection (OVP) and overcurrent protection (OCP) features. Additionally, consider using a fuse or a current limiter in series with the device.
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For optimal performance and reliability, use a 4-layer PCB with a solid ground plane, and ensure the device is placed close to the heat sink. Keep the high-frequency signals away from the device, and use a Kelvin connection for the gate and source pins.