-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in DPAK package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
98Y2471
|
Newark | Mosfet, N-Ch, 600V, 5A, To-252-3, Transistor Polarity:N Channel, Continuous Drain Current Id:5A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.86Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Dissipation Rohs Compliant: Yes |Stmicroelectronics STD7N60M2 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 4935 |
|
$0.8260 / $1.7200 | Buy Now |
DISTI #
06X3568
|
Newark | Hv Mosfet Mdmesh |Stmicroelectronics STD7N60M2 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
Buy Now | |
DISTI #
497-13941-1-ND
|
DigiKey | MOSFET N-CH 600V 5A DPAK Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
12833 In Stock |
|
$0.5506 / $1.0300 | Buy Now |
DISTI #
STD7N60M2
|
Avnet Americas | Trans MOSFET N-CH 600V 5A 3-Pin DPAK T/R - Tape and Reel (Alt: STD7N60M2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.6145 / $0.6409 | Buy Now |
DISTI #
511-STD7N60M2
|
Mouser Electronics | MOSFET N-CH 600V 0.86Ohm 5A MDmesh M2 RoHS: Compliant | 2260 |
|
$0.5500 / $1.0300 | Buy Now |
|
STMicroelectronics | N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in DPAK package RoHS: Compliant Min Qty: 1 | 2270 |
|
$0.7800 / $1.4400 | Buy Now |
|
Future Electronics | 600 V 0.86 Ohm typ., 5 A N-Channel MDmesh™ M2 Power Mosfet - DPAK-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks Container: Reel | 0Reel |
|
$0.5400 / $0.5650 | Buy Now |
|
Future Electronics | 600 V 0.86 Ohm typ., 5 A N-Channel MDmesh™ M2 Power Mosfet - DPAK-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks Container: Reel | 0Reel |
|
$0.5400 / $0.5650 | Buy Now |
|
Future Electronics | 600 V 0.86 Ohm typ., 5 A N-Channel MDmesh™ M2 Power Mosfet - DPAK-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks Container: Reel | 0Reel |
|
$0.5400 / $0.5650 | Buy Now |
|
Future Electronics | 600 V 0.86 Ohm typ., 5 A N-Channel MDmesh™ M2 Power Mosfet - DPAK-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks Container: Reel | 0Reel |
|
$0.5400 / $0.5650 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
STD7N60M2
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STD7N60M2
STMicroelectronics
N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in DPAK package
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | DPAK-3/2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 99 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 5 A | |
Drain-source On Resistance-Max | 0.95 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STD7N60M2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD7N60M2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
TK5Q60W | Nch 500V<VDSS≤700V | Toshiba America Electronic Components | STD7N60M2 vs TK5Q60W |
TK5P60W | Nch 500V<VDSS≤700V | Toshiba America Electronic Components | STD7N60M2 vs TK5P60W |
SPD04N60S5BTMA1 | Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3 | Infineon Technologies AG | STD7N60M2 vs SPD04N60S5BTMA1 |
TSM60N900CPROG | Power Field-Effect Transistor, 4.5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ANTIMONY AND HALOGEN FREE, ROHS COMPLIANT, DPAK-3/2 | Taiwan Semiconductor | STD7N60M2 vs TSM60N900CPROG |