Part Details for STD7N52DK3 by STMicroelectronics
Results Overview of STD7N52DK3 by STMicroelectronics
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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STD7N52DK3 Information
STD7N52DK3 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STD7N52DK3
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 3070 |
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RFQ | ||
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Quest Components | 2456 |
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$1.0440 / $2.7840 | Buy Now | |
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DISTI #
STD7N52DK3
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TME | Transistor: N-MOSFET, unipolar, 525V, 4A, 90W, DPAK, ESD Min Qty: 1 | 50 |
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$0.3580 / $0.4200 | Buy Now |
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ComSIT USA | 525 V, 6 A, 0.95 OHM, N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 6A I(D), 525V, 1.15ohm, ... more ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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DISTI #
STD7N52DK3
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EBV Elektronik | Trans MOSFET NCH 525V 6A 3Pin2Tab DPAK TR (Alt: STD7N52DK3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for STD7N52DK3
STD7N52DK3 CAD Models
STD7N52DK3 Part Data Attributes
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STD7N52DK3
STMicroelectronics
Buy Now
Datasheet
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STD7N52DK3
STMicroelectronics
N-channel 525 V, 0.95 Ohm typ., 6 A SuperFREDmesh(TM) 3 Power MOSFET in DPAK package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-252 | |
| Package Description | DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Additional Feature | ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 525 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 1.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 90 W | |
| Pulsed Drain Current-Max (IDM) | 24 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
STD7N52DK3 Frequently Asked Questions (FAQ)
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The maximum junction temperature of the STD7N52DK3 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
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To calculate the power dissipation of the STD7N52DK3, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance. The power dissipation can be calculated using the formula: Pd = (Vds x Ids) + (Vgs x Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.
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The recommended gate drive voltage for the STD7N52DK3 is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and the desired switching performance.
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Yes, the STD7N52DK3 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and the gate drive circuitry to ensure reliable operation.
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To protect the STD7N52DK3 from overvoltage and overcurrent, you can use a combination of voltage regulators, current sensors, and protection circuits. Additionally, it's essential to follow proper PCB design and layout practices to minimize the risk of electrical overstress.