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Transistors / Power Field-Effect Transistors / STD70N10F4
Datasheets
STD70N10F4 by:
STMicroelectronics
Hongxing Electrical Ltd
STMicroelectronics
Not Found

N-channel 100 V, 0.015 Ohm, 60 A, STripFET(TM) DeepGATE(TM) Power MOSFET in DPAK

Part Details for STD70N10F4 by STMicroelectronics

Results Overview of STD70N10F4 by STMicroelectronics

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

STD70N10F4 Information

STD70N10F4 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STD70N10F4

Part # Distributor Description Stock Price Buy
DISTI # 24AC5420
Newark Mosfet, N-Ch, 100V, 60A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuou... s Drain Current Id:60A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STD70N10F4 more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 8359
  • 1 $0.7480
  • 10 $0.7480
  • 25 $0.7480
  • 50 $0.7480
  • 100 $0.7480
  • 250 $0.7480
  • 500 $0.7480
  • 1,000 $0.7480
$0.7480 Buy Now
DISTI # 497-8806-1-ND
DigiKey MOSFET N-CH 100V 60A DPAK Min Qty: 1 Lead time: 13 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 1403
In Stock
  • 1 $2.6100
  • 10 $1.7540
  • 100 $1.3032
  • 500 $1.0527
  • 1,000 $0.9723
  • 2,500 $0.8852
  • 5,000 $0.8812
$0.8812 / $2.6100 Buy Now
DISTI # STD70N10F4
Avnet Americas Power MOSFET, N Channel, 100 V, 60 A, 19.5 mOhm, TO-252 (DPAK), 3 Pins, Surface Mount - Tape and Ree... l (Alt: STD70N10F4) more RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days Container: Reel 32500
  • 2,500 $0.8354
$0.8354 Buy Now
DISTI # 24AC5420
Avnet Americas Power MOSFET, N Channel, 100 V, 60 A, 19.5 mOhm, TO-252 (DPAK), 3 Pins, Surface Mount - Product that... comes on tape, but is not reeled (Alt: 24AC5420) more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 32 Weeks, 4 Days Container: Ammo Pack 8359 Partner Stock
  • 1 $2.2500
  • 10 $1.3700
  • 25 $1.2900
  • 50 $1.2000
  • 100 $1.1200
$1.1200 / $2.2500 Buy Now
DISTI # STD70N10F4
Avnet Americas Power MOSFET, N Channel, 100 V, 60 A, 19.5 mOhm, TO-252 (DPAK), 3 Pins, Surface Mount - Tape and Ree... l (Alt: STD70N10F4) more RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.9412
  • 5,000 $0.9235
  • 10,000 $0.9094
  • 15,000 $0.8953
  • 20,000 $0.8812
$0.8812 / $0.9412 Buy Now
DISTI # 511-STD70N10F4
Mouser Electronics MOSFETs N-Ch, 100V-0.015ohms 60A RoHS: Compliant 445
  • 1 $2.5600
  • 10 $1.7200
  • 100 $1.3100
  • 250 $1.2700
  • 500 $1.0600
  • 1,000 $0.9730
  • 2,500 $0.8850
  • 5,000 $0.8810
$0.8810 / $2.5600 Buy Now
DISTI # V72:2272_06559902
Arrow Electronics Trans MOSFET N-CH 100V 60A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Date Code: 2405 Container: Cut Strips Americas - 10
  • 1 $1.4207
  • 10 $0.9041
$0.9041 / $1.4207 Buy Now
STMicroelectronics N-channel 100 V, 0.015 Ohm, 60 A, STripFET(TM) DeepGATE(TM) Power MOSFET in DPAK RoHS: Compliant Min Qty: 1 90
  • 1 $2.5100
  • 10 $1.6900
  • 100 $1.2800
  • 250 $1.2500
  • 500 $1.0400
$1.0400 / $2.5100 Buy Now
DISTI # 87112822
Verical Trans MOSFET N-CH 100V 60A 3-Pin(2+Tab) DPAK T/R Min Qty: 67 Package Multiple: 1 Americas - 8359
  • 67 $1.2786
  • 100 $1.2214
  • 250 $1.1725
  • 500 $1.1301
  • 1,000 $1.0933
  • 2,500 $1.0610
  • 5,000 $1.0324
$1.0324 / $1.2786 Buy Now
DISTI # 77795749
Verical Trans MOSFET N-CH 100V 60A 3-Pin(2+Tab) DPAK T/R Min Qty: 7 Package Multiple: 1 Date Code: 2405 Americas - 10
  • 7 $1.4207
  • 10 $0.9041
$0.9041 / $1.4207 Buy Now
DISTI # STD70N10F4
IBS Electronics N-CHANNEL 100 V 0.015 OHM 60 A STRIPFET(TM) DEEPGATE(TM) POWER MOSFET IN DPAK Min Qty: 2500 Package Multiple: 1 0
  • 2,500 $1.0308
$1.0308 Buy Now
DISTI # STD70N10F4
Avnet Silica Trans MOSFET NCH 100V 60A 3Pin2Tab DPAK TR (Alt: STD70N10F4) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days Silica - 2500
Buy Now
Chip-Germany GmbH   RoHS: Not Compliant 71
RFQ
LCSC 100V 60A 125W 0.019510V30A 2V 1 N-channel DPAK(TO-252) MOSFETs ROHS 1
  • 1 $1.2534
  • 10 $1.2197
  • 30 $1.1983
  • 100 $1.1769
$1.1769 / $1.2534 Buy Now
Vyrian Transistors 4411
RFQ
Win Source Electronics MOSFET N-CH 100V 60A DPAK 16670
  • 35 $1.5149
  • 75 $1.4172
  • 110 $1.3683
  • 160 $1.2706
  • 205 $1.2217
  • 260 $1.1729
$1.1729 / $1.5149 Buy Now

Part Details for STD70N10F4

STD70N10F4 CAD Models

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STD70N10F4 Part Data Attributes

Parametric Data
STD70N10F4 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STD70N10F4 STMicroelectronics N-channel 100 V, 0.015 Ohm, 60 A, STripFET(TM) DeepGATE(TM) Power MOSFET in DPAK
Select a part to compare:
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-252
Package Description ROHS COMPLIANT, DPAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 32 Weeks, 4 Days
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 120 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 60 A
Drain-source On Resistance-Max 0.0195 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 240 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STD70N10F4

This table gives cross-reference parts and alternative options found for STD70N10F4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD70N10F4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF540PBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN STD70N10F4 vs IRF540PBF
IRF541-010 International Rectifier Check for Price Power Field-Effect Transistor, 28A I(D), 80V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET STD70N10F4 vs IRF541-010
IRF541-001 International Rectifier Check for Price Power Field-Effect Transistor, 28A I(D), 80V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET STD70N10F4 vs IRF541-001
IRF542 TT Electronics Resistors Check for Price Power Field-Effect Transistor, 25A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN STD70N10F4 vs IRF542
IRF542 Motorola Semiconductor Products Check for Price Power Field-Effect Transistor, 24A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB STD70N10F4 vs IRF542
IRF543-010 International Rectifier Check for Price Power Field-Effect Transistor, 25A I(D), 80V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET STD70N10F4 vs IRF543-010
NTB6411ANG Rochester Electronics LLC Check for Price 72A, 100V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 418B-04, D2PAK-3 STD70N10F4 vs NTB6411ANG
IRF542 Vishay Siliconix Check for Price Power Field-Effect Transistor, 24A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN STD70N10F4 vs IRF542
IRF541 Rochester Electronics LLC Check for Price 28A, 80V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB STD70N10F4 vs IRF541
STD60N10 STMicroelectronics Check for Price 60A, 100V, 0.0195ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, DPAK-3 STD70N10F4 vs STD60N10

STD70N10F4 Related Parts

STD70N10F4 Frequently Asked Questions (FAQ)

  • The maximum operating frequency of the STD70N10F4 is 100 kHz, but it can be operated at higher frequencies with reduced voltage ratings.

  • To ensure proper cooling, the STD70N10F4 should be mounted on a heat sink with a thermal resistance of less than 1°C/W. Additionally, the device should be placed in a well-ventilated area to prevent overheating.

  • The recommended gate resistor value for the STD70N10F4 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.

  • Yes, the STD70N10F4 is suitable for high-reliability applications due to its robust design and manufacturing process. However, it is essential to follow proper design and assembly guidelines to ensure the device operates within its specified parameters.

  • To protect the STD70N10F4 from ESD, it is recommended to handle the device in an ESD-controlled environment, use ESD-protective packaging, and follow proper handling and assembly procedures.