Part Details for STD3NB50T4 by STMicroelectronics
Overview of STD3NB50T4 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Smart Cities
Motor control systems
Part Details for STD3NB50T4
STD3NB50T4 CAD Models
STD3NB50T4 Part Data Attributes
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STD3NB50T4
STMicroelectronics
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Datasheet
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STD3NB50T4
STMicroelectronics
3A, 500V, 2.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-252AA | |
| Package Description | TO-252, DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 40 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 3 A | |
| Drain-source On Resistance-Max | 2.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STD3NB50T4
This table gives cross-reference parts and alternative options found for STD3NB50T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD3NB50T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STP7NK40Z | N-channel 400 V, 0.85 Ohm typ., 5.4 A SuperMESH POWER Mosfet in TO-220 package | STMicroelectronics | STD3NB50T4 vs STP7NK40Z |
| IXFK100N25 | Power Field-Effect Transistor, 100A I(D), 250V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN | IXYS Corporation | STD3NB50T4 vs IXFK100N25 |
| FQP5P20 | Power Field-Effect Transistor, 4.8A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | STD3NB50T4 vs FQP5P20 |
| IXFH16N50P3 | Power Field-Effect Transistor, 16A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN | IXYS Corporation | STD3NB50T4 vs IXFH16N50P3 |
| FQP6N60C | Power Field-Effect Transistor, 5.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | STD3NB50T4 vs FQP6N60C |
| STW10NK80Z | N-channel 800 V, 0.78 Ohm, 9 A Zener-protected SuperMESH(TM) Power MOSFETs in TO-247 package | STMicroelectronics | STD3NB50T4 vs STW10NK80Z |
| IXFK60N55Q2 | Power Field-Effect Transistor, 60A I(D), 550V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN | Littelfuse Inc | STD3NB50T4 vs IXFK60N55Q2 |
| IRLSZ34 | Power Field-Effect Transistor, 16A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | STD3NB50T4 vs IRLSZ34 |
| IRFP250B | Power Field-Effect Transistor, 32A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | STD3NB50T4 vs IRFP250B |
| IXFH20N60Q | Power Field-Effect Transistor, 20A I(D), 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | IXYS Corporation | STD3NB50T4 vs IXFH20N60Q |