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Transistors / Power Field-Effect Transistors / STD3LN62K3
Datasheets
STD3LN62K3 by: STMicroelectronics

N-channel 620 V, 2.5 Ohm, 2.5 A SuperMESH3(TM) Power MOSFET DPAK

Part Details for STD3LN62K3 by STMicroelectronics

Results Overview of STD3LN62K3 by STMicroelectronics

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

STD3LN62K3 Information

STD3LN62K3 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STD3LN62K3

Part # Distributor Description Stock Price Buy
DISTI # 511-STD3LN62K3
Mouser Electronics MOSFETs N-Ch 620V 2.5 Ohm SuperMESH3 3 Ohm RDS RoHS: Compliant 0
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Bristol Electronics   2263
RFQ
Quest Components   1810
  • 1 $2.4480
  • 531 $1.0098
  • 991 $0.9180
$0.9180 / $2.4480 Buy Now
ComSIT USA 620 V, 2.5 A, 2.5 OHM N-CHANNEL SUPERMESH3 POWER MOSFET DPAK Power Field-Effect Transistor, 2.5A I(D... ), 620V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 more RoHS: Compliant ECCN: EAR99 Stock DE - 5000
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # STD3LN62K3
EBV Elektronik Trans MOSFET NCH 620V 25A 3Pin2Tab DPAK TR (Alt: STD3LN62K3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days EBV - 0
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Part Details for STD3LN62K3

STD3LN62K3 CAD Models

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STD3LN62K3 Part Data Attributes

Parametric Data
STD3LN62K3 STMicroelectronics
Buy Now Datasheet
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STD3LN62K3 STMicroelectronics N-channel 620 V, 2.5 Ohm, 2.5 A SuperMESH3(TM) Power MOSFET DPAK
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-252
Package Description ROHS COMPLIANT, DPAK-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Additional Feature ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 90 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 620 V
Drain Current-Max (ID) 2.5 A
Drain-source On Resistance-Max 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 10 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STD3LN62K3

This table gives cross-reference parts and alternative options found for STD3LN62K3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD3LN62K3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
STU3LN62K3 STMicroelectronics Check for Price N-channel 620 V, 2.5 Ohm, 2.5 A SuperMESH3(TM) Power MOSFET IPAK STD3LN62K3 vs STU3LN62K3

STD3LN62K3 Related Parts

STD3LN62K3 Frequently Asked Questions (FAQ)

  • The maximum junction temperature that the STD3LN62K3 can withstand is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to prevent thermal runaway.

  • To ensure the STD3LN62K3 is properly biased, make sure to follow the recommended biasing scheme in the datasheet. This typically involves connecting the gate to a voltage source through a resistor, and ensuring the drain-source voltage is within the recommended range.

  • To minimize parasitic inductance and capacitance, it's recommended to use a compact PCB layout with short traces and minimal vias. Place the STD3LN62K3 close to the power source and use a solid ground plane to reduce inductance. Also, use a Kelvin connection for the source pin to reduce parasitic inductance.

  • To protect the STD3LN62K3 from ESD, handle the device by the body or use an ESD wrist strap or mat. Ensure the PCB is designed with ESD protection in mind, such as using ESD diodes or resistors. Also, use a conformal coating to protect the device from moisture and humidity.

  • The recommended gate drive voltage for the STD3LN62K3 is typically between 10V to 15V, depending on the specific application and required switching speed. However, it's essential to ensure the gate drive voltage is within the recommended range specified in the datasheet to prevent damage to the device.