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N-channel 60 V, 0.014 Ohm typ., 35 A StripFET II Power MOSFET in a DPAK package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STD35NF06LT4 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
33R1160
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Newark | Mosfet, N Channel, 60V, 35A, Dpak, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuo... more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1939 |
|
$0.9780 / $1.8400 | Buy Now |
DISTI #
86AK6478
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Newark | Mosfet, N-Ch, 60V, 17.5A, To-252 Rohs Compliant: Yes |Stmicroelectronics STD35NF06LT4 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$1.0100 / $1.0300 | Buy Now |
DISTI #
497-7965-1-ND
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DigiKey | MOSFET N-CH 60V 35A DPAK Min Qty: 1 Lead time: 13 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
8079 In Stock |
|
$0.5623 / $1.7700 | Buy Now |
DISTI #
STD35NF06LT4
|
Avnet Americas | Power MOSFET, N Channel, 60 V, 35 A, 17 Milliohms, TO-252 (DPAK), 3 Pins, Surface Mount - Tape and R... more RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days Container: Reel |
10000 |
|
$0.5327 / $0.5665 | Buy Now |
DISTI #
33R1160
|
Avnet Americas | Power MOSFET, N Channel, 60 V, 35 A, 17 Milliohms, TO-252 (DPAK), 3 Pins, Surface Mount - Product th... more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Ammo Pack |
1939 Partner Stock |
|
$1.1000 / $2.1500 | Buy Now |
DISTI #
STD35NF06LT4
|
Avnet Americas | Power MOSFET, N Channel, 60 V, 35 A, 17 Milliohms, TO-252 (DPAK), 3 Pins, Surface Mount - Tape and R... more RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
|
$0.5327 / $0.5665 | Buy Now |
DISTI #
511-STD35NF06L
|
Mouser Electronics | MOSFETs N-Ch 60 Volt 35 Amp RoHS: Compliant | 3152 |
|
$0.5570 / $1.7400 | Buy Now |
DISTI #
E02:0323_00209765
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Arrow Electronics | Trans MOSFET N-CH 60V 35A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks Date Code: 2502 | Europe - 17500 |
|
$0.5716 / $0.6212 | Buy Now |
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STMicroelectronics | N-channel 60 V, 0.014 Ohm typ., 35 A StripFET II Power MOSFET in a DPAK package RoHS: Compliant Min Qty: 1 | 3152 |
|
$0.7200 / $1.7100 | Buy Now |
|
Future Electronics | STD35NF06L Series 60 V 0.017 Ohm 35 A N-Channel STripFET™ II Power Mosfet-DPAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Container: Cut Tape/Mini-Reel |
4 Cut Tape/Mini-Reel |
|
$0.9750 / $1.3000 | Buy Now |
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STD35NF06LT4
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STD35NF06LT4
STMicroelectronics
N-channel 60 V, 0.014 Ohm typ., 35 A StripFET II Power MOSFET in a DPAK package
Select a part to compare: |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-252AA | |
Package Description | ROHS COMPLIANT, DPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 280 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 35 A | |
Drain-source On Resistance-Max | 0.02 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 80 W | |
Pulsed Drain Current-Max (IDM) | 140 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STD35NF06LT4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD35NF06LT4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | STD35NF06LT4 vs IPB80N06S2LH5ATMA1 |
STD3NA50T4 | STMicroelectronics | Check for Price | 2.7A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 | STD35NF06LT4 vs STD3NA50T4 |
934057024118 | NXP Semiconductors | Check for Price | 75A, 30V, 0.0152ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3 | STD35NF06LT4 vs 934057024118 |
STH8NA60 | STMicroelectronics | Check for Price | 8A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | STD35NF06LT4 vs STH8NA60 |
STP7NE10 | STMicroelectronics | Check for Price | 7A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STD35NF06LT4 vs STP7NE10 |
STD65N6F3 | STMicroelectronics | Check for Price | 65A, 60V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, DPAK-3 | STD35NF06LT4 vs STD65N6F3 |
FDP6035L | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STD35NF06LT4 vs FDP6035L |
NDB705BEL | National Semiconductor Corporation | Check for Price | TRANSISTOR 70 A, 50 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power | STD35NF06LT4 vs NDB705BEL |
STD5NE10T4 | STMicroelectronics | Check for Price | 5A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 | STD35NF06LT4 vs STD5NE10T4 |
NDB705BE | Texas Instruments | Check for Price | 70A, 50V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | STD35NF06LT4 vs NDB705BE |
The maximum junction temperature that the STD35NF06LT4 can withstand is 150°C.
To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, the device should be mounted on a PCB with a thermal pad and thermal vias to dissipate heat efficiently.
The recommended gate resistor value for the STD35NF06LT4 is between 10Ω and 100Ω, depending on the specific application and switching frequency.
Yes, the STD35NF06LT4 is qualified for automotive and industrial applications, and is suitable for use in high-reliability applications. However, it is essential to follow proper design and manufacturing guidelines to ensure the device operates within its specified parameters.
To protect the STD35NF06LT4 from ESD, it is recommended to handle the device in an ESD-controlled environment, use ESD-protective packaging, and follow proper handling and storage procedures.