There are no models available for this part yet.
Overview of STD2NC70Z by STMicroelectronics
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Internet of Things (IoT)
Environmental Monitoring
Space Technology
Industrial Automation
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Automotive
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Aerospace and Defense
Healthcare
Renewable Energy
Electronic Manufacturing
Communication and Networking
Robotics and Drones
CAD Models for STD2NC70Z by STMicroelectronics
Part Data Attributes for STD2NC70Z by STMicroelectronics
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
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|
Ihs Manufacturer
|
STMICROELECTRONICS
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|
Part Package Code
|
TO-252
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|
Package Description
|
SMALL OUTLINE, R-PSSO-G2
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Pin Count
|
3
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|
Reach Compliance Code
|
not_compliant
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|
ECCN Code
|
EAR99
|
|
Avalanche Energy Rating (Eas)
|
165 mJ
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Configuration
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SINGLE WITH BUILT-IN DIODE
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|
DS Breakdown Voltage-Min
|
700 V
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Drain Current-Max (ID)
|
2.3 A
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|
Drain-source On Resistance-Max
|
4.7 Ω
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FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
|
TO-252
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JESD-30 Code
|
R-PSSO-G2
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|
JESD-609 Code
|
e3
|
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Number of Elements
|
1
|
|
Number of Terminals
|
2
|
|
Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
|
150 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Polarity/Channel Type
|
N-CHANNEL
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|
Power Dissipation-Max (Abs)
|
55 W
|
|
Pulsed Drain Current-Max (IDM)
|
9.2 A
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|
Qualification Status
|
Not Qualified
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|
Surface Mount
|
YES
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Terminal Finish
|
MATTE TIN
|
|
Terminal Form
|
GULL WING
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|
Terminal Position
|
SINGLE
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Transistor Application
|
SWITCHING
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|
Transistor Element Material
|
SILICON
|
Alternate Parts for STD2NC70Z
This table gives cross-reference parts and alternative options found for STD2NC70Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD2NC70Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NDB706AL | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Texas Instruments | STD2NC70Z vs NDB706AL |
| IPB80N06S2LH5ATMA1 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STD2NC70Z vs IPB80N06S2LH5ATMA1 |
| IXFH12N100F | Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXYS Corporation | STD2NC70Z vs IXFH12N100F |
| F10F6N | Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FTO-220, 3 PIN | Shindengen Electronic Manufacturing Co Ltd | STD2NC70Z vs F10F6N |
| STP9NK65Z | N-channel 650 V - 1 Ohm - 6.4 A TO-220 Zener-protected SuperMESH(TM) Power MOSFET | STMicroelectronics | STD2NC70Z vs STP9NK65Z |
| STD5NE10T4 | 5A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 | STMicroelectronics | STD2NC70Z vs STD5NE10T4 |
| NDB705BEL | TRANSISTOR 70 A, 50 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power | National Semiconductor Corporation | STD2NC70Z vs NDB705BEL |
| IXFH30N40Q | Power Field-Effect Transistor, 30A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Littelfuse Inc | STD2NC70Z vs IXFH30N40Q |
| SPB80N06S2-07 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STD2NC70Z vs SPB80N06S2-07 |
| SPP80N03S2L-05 | Power Field-Effect Transistor, 80A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STD2NC70Z vs SPP80N03S2L-05 |