Datasheets
STD13NM60N by: STMicroelectronics

N-channel 600 V, 280 mOhm typ., 11 A MDmesh II Power MOSFET in a DPAK package

Part Details for STD13NM60N by STMicroelectronics

Results Overview of STD13NM60N by STMicroelectronics

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Industrial Automation Energy and Power Systems Renewable Energy Automotive

STD13NM60N Information

STD13NM60N by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STD13NM60N

Part # Distributor Description Stock Price Buy
DISTI # 33X1194
Newark Mosfet, N-Ch, 600V, 11A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuou... s Drain Current Id:11A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STD13NM60N more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 2873
  • 1 $0.6300
  • 10 $0.6300
  • 25 $0.6300
  • 50 $0.6300
  • 100 $0.6300
$0.6300 Buy Now
DISTI # 98AC2702
Newark Ptd High Voltage Rohs Compliant: Yes |Stmicroelectronics STD13NM60N RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $1.7200
$1.7200 Buy Now
DISTI # 497-8773-1-ND
DigiKey MOSFET N-CH 600V 11A DPAK Min Qty: 1 Lead time: 14 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 2992
In Stock
  • 1 $2.9000
  • 10 $2.0600
  • 100 $1.6672
  • 500 $1.3606
  • 1,000 $1.2622
  • 2,500 $1.1949
$1.1949 / $2.9000 Buy Now
DISTI # 33X1194
Avnet Americas Trans MOSFET N-CH 650V 11A 3-Pin(2+Tab) DPAK T/R - Bulk (Alt: 33X1194) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 5 Days Container: Bulk 2873 Partner Stock
  • 1 $3.1000
  • 10 $2.3500
  • 25 $2.1600
  • 50 $1.9700
  • 100 $1.7800
$1.7800 / $3.1000 Buy Now
DISTI # STD13NM60N
Avnet Americas Trans MOSFET N-CH 650V 11A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: STD13NM60N) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days Container: Reel 0
  • 2,500 $1.7370
  • 5,000 $1.7260
  • 10,000 $1.6941
  • 15,000 $1.6633
  • 20,000 $1.6336
$1.6336 / $1.7370 Buy Now
DISTI # 511-STD13NM60N
Mouser Electronics MOSFETs N-Ch 600 Volt 11 Amp Power MDmesh RoHS: Compliant 6596
  • 1 $2.5900
  • 10 $1.9600
  • 100 $1.6500
  • 500 $1.3700
  • 1,000 $1.2700
  • 2,500 $1.1900
$1.1900 / $2.5900 Buy Now
DISTI # E02:0323_03155855
Arrow Electronics STD13NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 11A 3-Pin(2+Tab) DPAK T/R - Arrow.com Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks Date Code: 2450 Europe - 45000
  • 2,500 $1.1110
  • 5,000 $1.0866
$1.0866 / $1.1110 Buy Now
DISTI # V36:1790_06559807
Arrow Electronics STD13NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 11A 3-Pin(2+Tab) DPAK T/R - Arrow.com Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks Date Code: 2422 Americas - 2500
  • 2,500 $1.6450
$1.6450 Buy Now
DISTI # V72:2272_06559807
Arrow Electronics STD13NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 11A 3-Pin(2+Tab) DPAK T/R - Arrow.com Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks Date Code: 2349 Container: Cut Strips Americas - 1600
  • 1 $2.0740
  • 10 $1.8260
  • 25 $1.8150
  • 100 $1.8010
  • 250 $1.7870
  • 500 $1.7730
  • 1,000 $1.7600
$1.7600 / $2.0740 Buy Now
STMicroelectronics N-channel 600 V, 280 mOhm typ., 11 A MDmesh II Power MOSFET in a DPAK package RoHS: Compliant Min Qty: 1 6596
  • 1 $2.5400
  • 10 $1.9200
  • 100 $1.6200
  • 250 $1.6200
  • 500 $1.3400
$1.3400 / $2.5400 Buy Now
Future Electronics N-Channel 600 V 0.36 Ohm MDmesh™ II Power MosFet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks Container: Reel 0
Reel
  • 2,500 $0.9600
$0.9600 Buy Now
Future Electronics N-Channel 600 V 0.36 Ohm MDmesh™ II Power MosFet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks Container: Reel 0
Reel
  • 2,500 $0.9600
$0.9600 Buy Now
Future Electronics N-Channel 600 V 0.36 Ohm MDmesh™ II Power MosFet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks Container: Reel 0
Reel
  • 2,500 $0.9600
$0.9600 Buy Now
DISTI # 87136890
Verical STD13NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 11A 3-Pin(2+Tab) DPAK T/R - Arrow.com Min Qty: 2500 Package Multiple: 2500 Date Code: 2450 Americas - 45000
  • 2,500 $1.1054
  • 5,000 $1.0811
$1.0811 / $1.1054 Buy Now
DISTI # 83712553
Verical STD13NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 11A 3-Pin(2+Tab) DPAK T/R - Arrow.com Min Qty: 80 Package Multiple: 1 Americas - 2873
  • 80 $1.0769
  • 100 $1.0288
  • 250 $0.9875
  • 500 $0.9519
  • 1,000 $0.9208
  • 2,500 $0.8936
$0.8936 / $1.0769 Buy Now
DISTI # 86940828
Verical STD13NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 11A 3-Pin(2+Tab) DPAK T/R - Arrow.com Min Qty: 2500 Package Multiple: 2500 Date Code: 2422 Americas - 2500
  • 2,500 $1.6450
$1.6450 Buy Now
DISTI # 85246191
Verical STD13NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 11A 3-Pin(2+Tab) DPAK T/R - Arrow.com Min Qty: 4 Package Multiple: 1 Date Code: 2349 Americas - 1600
  • 4 $2.0740
  • 10 $1.8260
  • 25 $1.8150
  • 100 $1.8010
  • 250 $1.7870
  • 500 $1.7730
  • 1,000 $1.7600
$1.7600 / $2.0740 Buy Now
Bristol Electronics   31
RFQ
Quest Components POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 600V, 0.36OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE S... EMICONDUCTOR FET, TO-252 more 1819
  • 1 $3.7800
  • 489 $1.1813
  • 848 $1.0395
$1.0395 / $3.7800 Buy Now
DISTI # STD13NM60N
TME Transistor: N-MOSFET, unipolar, 600V, 6.93A, 90W, DPAK Min Qty: 1 1558
  • 1 $2.5400
  • 10 $1.4500
  • 100 $1.1300
  • 250 $1.0900
  • 500 $1.0000
  • 1,000 $0.9600
$0.9600 / $2.5400 Buy Now
DISTI # STD13NM60N
Avnet Silica Trans MOSFET NCH 650V 11A 3Pin2Tab DPAK TR (Alt: STD13NM60N) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days Silica - 2500
Buy Now
DISTI # STD13NM60N
EBV Elektronik Trans MOSFET NCH 650V 11A 3Pin2Tab DPAK TR (Alt: STD13NM60N) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days EBV - 117500
Buy Now
LCSC 600V 11A 0.3610V5.5A 3V 1 N-channel TO-252-2(DPAK) MOSFETs ROHS 2441
  • 10 $1.3022
  • 30 $1.1592
  • 100 $0.9963
  • 500 $0.9240
  • 1,000 $0.8917
  • 2,500 $0.8810
  • 5,000 $0.8733
$0.8733 / $1.3022 Buy Now
Vyrian Transistors 19974
RFQ
Win Source Electronics MOSFET N-CH 600V 11A DPAK 93773
  • 35 $1.5929
  • 80 $1.3070
  • 120 $1.2662
  • 165 $1.2254
  • 215 $1.1845
  • 285 $1.0620
$1.0620 / $1.5929 Buy Now

Part Details for STD13NM60N

STD13NM60N CAD Models

STD13NM60N Part Data Attributes

STD13NM60N STMicroelectronics
Buy Now Datasheet
Compare Parts:
STD13NM60N STMicroelectronics N-channel 600 V, 280 mOhm typ., 11 A MDmesh II Power MOSFET in a DPAK package
Select a part to compare:
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-252
Package Description ROHS COMPLIANT, DPAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 5 Days
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 200 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.36 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 90 W
Pulsed Drain Current-Max (IDM) 44 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STD13NM60N

This table gives cross-reference parts and alternative options found for STD13NM60N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD13NM60N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
STD13NM60ND STMicroelectronics $0.9196 N-channel 600 V, 0.32 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in DPAK package STD13NM60N vs STD13NM60ND

STD13NM60N Related Parts

STD13NM60N Frequently Asked Questions (FAQ)

  • The maximum operating frequency of the STD13NM60N is 100 kHz, but it can be operated at higher frequencies with proper thermal management and derating.

  • Proper thermal management can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device. Additionally, the PCB should be designed to minimize thermal resistance and ensure good heat dissipation.

  • The recommended gate resistor value for the STD13NM60N is between 10 ohms and 100 ohms, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) but may increase switching losses.

  • Yes, the STD13NM60N is a high-reliability device that is suitable for use in high-reliability applications such as aerospace, automotive, and industrial control systems. However, it is essential to follow proper design and manufacturing guidelines to ensure the device operates within its specified parameters.

  • To protect the STD13NM60N from overvoltage and overcurrent, it is recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.