Part Details for STD12NE06 by STMicroelectronics
Results Overview of STD12NE06 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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STD12NE06 Information
STD12NE06 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for STD12NE06
STD12NE06 CAD Models
STD12NE06 Part Data Attributes
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STD12NE06
STMicroelectronics
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Datasheet
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STD12NE06
STMicroelectronics
12A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, DPAK-3
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-252 | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 45 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STD12NE06
This table gives cross-reference parts and alternative options found for STD12NE06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD12NE06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFR014 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | STD12NE06 vs IRFR014 |
| IRFR014 | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | STD12NE06 vs IRFR014 |
| IRFR014TRPBF | Vishay Intertechnologies | $0.7592 | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | STD12NE06 vs IRFR014TRPBF |
| IRFR014-T1 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 8.2A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | STD12NE06 vs IRFR014-T1 |
| IRFR014TRLPBF | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | STD12NE06 vs IRFR014TRLPBF |
| IRFR014 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 8.2A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | STD12NE06 vs IRFR014 |
| IRFR014PBF | Vishay Intertechnologies | $0.3629 | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | STD12NE06 vs IRFR014PBF |
| IRFR014TRL | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | STD12NE06 vs IRFR014TRL |
| IRFR014TRRPBF | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | STD12NE06 vs IRFR014TRRPBF |
| IRFR014 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 8.2A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | STD12NE06 vs IRFR014 |
STD12NE06 Frequently Asked Questions (FAQ)
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The maximum operating frequency of STD12NE06 is 100 MHz, but it can be overclocked up to 150 MHz with proper thermal management and power supply.
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To ensure reliable operation in high-temperature environments, it is recommended to use a heat sink, ensure good airflow, and follow the thermal management guidelines provided in the datasheet.
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The recommended PCB layout for STD12NE06 includes using a solid ground plane, keeping the power supply traces short and wide, and using a common mode choke to filter out high-frequency noise.
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Yes, STD12NE06 can be used in switching power supply applications, but it is recommended to use a suitable gate driver and ensure that the device is properly snubbed to prevent voltage spikes and ringing.
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To protect STD12NE06 from overvoltage and overcurrent conditions, it is recommended to use a voltage regulator, overvoltage protection (OVP) circuit, and overcurrent protection (OCP) circuit, such as a fuse or a current sense resistor.