Part Details for STD11NM60N-1 by STMicroelectronics
Overview of STD11NM60N-1 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for STD11NM60N-1
STD11NM60N-1 CAD Models
STD11NM60N-1 Part Data Attributes
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STD11NM60N-1
STMicroelectronics
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Datasheet
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STD11NM60N-1
STMicroelectronics
10A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-251 | |
Package Description | ROHS COMPLIANT, IPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 200 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.45 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-251 | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 100 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for STD11NM60N-1
This table gives cross-reference parts and alternative options found for STD11NM60N-1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD11NM60N-1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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STP95N2LH5 | 95A, 25V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | STMicroelectronics | STD11NM60N-1 vs STP95N2LH5 |
STP20N95K5 | N-channel 950 V, 0.275 Ohm typ., 17.5 A MDmesh K5 Power MOSFET in a TO-220 package | STMicroelectronics | STD11NM60N-1 vs STP20N95K5 |
STP19NM50N | N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-220 | STMicroelectronics | STD11NM60N-1 vs STP19NM50N |
STP95N3LLH6 | N-channel 30 V, 4.2 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package | STMicroelectronics | STD11NM60N-1 vs STP95N3LLH6 |
IRFSL4127PBF | Power Field-Effect Transistor, 72A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN | Infineon Technologies AG | STD11NM60N-1 vs IRFSL4127PBF |
STP13N95K3 | N-channel 950 V, 0.68 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-220 | STMicroelectronics | STD11NM60N-1 vs STP13N95K3 |
STP7NM60N | 5A, 600V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | STMicroelectronics | STD11NM60N-1 vs STP7NM60N |
STP165N10F4 | N-channel 100 V STripFET™ DeepGATE™ Power MOSFET, 4.1 mOhm, 160 A TO-220, H2PAK | STMicroelectronics | STD11NM60N-1 vs STP165N10F4 |
STP90N55F4 | N-channel 55 V, 0.0064 Ohm, 90 A TO-220 Power MOSFET | STMicroelectronics | STD11NM60N-1 vs STP90N55F4 |
STP10NM60N | N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in TO-220 package | STMicroelectronics | STD11NM60N-1 vs STP10NM60N |