Datasheets
STD11NM60N-1 by: STMicroelectronics

10A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3

Part Details for STD11NM60N-1 by STMicroelectronics

Overview of STD11NM60N-1 by STMicroelectronics

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Part Details for STD11NM60N-1

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STD11NM60N-1 Part Data Attributes

STD11NM60N-1 STMicroelectronics
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STD11NM60N-1 STMicroelectronics 10A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-251
Package Description ROHS COMPLIANT, IPAK-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 200 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.45 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 100 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STD11NM60N-1

This table gives cross-reference parts and alternative options found for STD11NM60N-1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD11NM60N-1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
STP95N2LH5 95A, 25V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN STMicroelectronics STD11NM60N-1 vs STP95N2LH5
STP20N95K5 N-channel 950 V, 0.275 Ohm typ., 17.5 A MDmesh K5 Power MOSFET in a TO-220 package STMicroelectronics STD11NM60N-1 vs STP20N95K5
STP19NM50N N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-220 STMicroelectronics STD11NM60N-1 vs STP19NM50N
STP95N3LLH6 N-channel 30 V, 4.2 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package STMicroelectronics STD11NM60N-1 vs STP95N3LLH6
IRFSL4127PBF Power Field-Effect Transistor, 72A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN Infineon Technologies AG STD11NM60N-1 vs IRFSL4127PBF
STP13N95K3 N-channel 950 V, 0.68 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-220 STMicroelectronics STD11NM60N-1 vs STP13N95K3
STP7NM60N 5A, 600V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN STMicroelectronics STD11NM60N-1 vs STP7NM60N
STP165N10F4 N-channel 100 V STripFET™ DeepGATE™ Power MOSFET, 4.1 mOhm, 160 A TO-220, H2PAK STMicroelectronics STD11NM60N-1 vs STP165N10F4
STP90N55F4 N-channel 55 V, 0.0064 Ohm, 90 A TO-220 Power MOSFET STMicroelectronics STD11NM60N-1 vs STP90N55F4
STP10NM60N N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in TO-220 package STMicroelectronics STD11NM60N-1 vs STP10NM60N

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