-
Part Symbol
-
Footprint
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for STD11N60DM2 by STMicroelectronics
Overview of STD11N60DM2 by STMicroelectronics
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for STD11N60DM2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
14AC7523
|
Newark | Power Mosfet, N Channel, 10A, To-252-3, Transistor Polarity:N Channel, Continuous Drain Current Id:10A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.37Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Stmicroelectronics STD11N60DM2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$0.8490 / $1.7500 | Buy Now |
|
DISTI #
497-16925-1-ND
|
DigiKey | MOSFET N-CH 650V 10A DPAK Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1854 In Stock |
|
$0.6124 / $2.0600 | Buy Now |
|
DISTI #
STD11N60DM2
|
Avnet Americas | Transistor MOSFET N-CH 600V 10A 3-Pin TO-252 T/R - Bulk (Alt: STD11N60DM2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Bulk | 0 |
|
$0.5475 | Buy Now |
|
DISTI #
511-STD11N60DM2
|
Mouser Electronics | MOSFETs N-channel 600 V, 370 mOhm typ 10 A MDmesh DM2 Power MOSFET RoHS: Compliant | 3465 |
|
$0.6120 / $1.7800 | Buy Now |
|
|
STMicroelectronics | N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package RoHS: Compliant Min Qty: 1 | 3465 |
|
$0.8000 / $1.7400 | Buy Now |
|
|
Future Electronics | N-Channel 600 V 0.42 Ohm Surface Mount MDmesh™ DM2 Power Mosfet - DPAK-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks Container: Reel | 0Reel |
|
$0.5850 / $0.6100 | Buy Now |
|
|
Future Electronics | N-Channel 600 V 0.42 Ohm Surface Mount MDmesh™ DM2 Power Mosfet - DPAK-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks Container: Reel | 0Reel |
|
$0.5850 / $0.6100 | Buy Now |
|
|
Future Electronics | N-Channel 600 V 0.42 Ohm Surface Mount MDmesh™ DM2 Power Mosfet - DPAK-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks Container: Reel | 0Reel |
|
$0.5900 / $0.6200 | Buy Now |
|
DISTI #
STD11N60DM2
|
Avnet Silica | Transistor MOSFET N-CH 600V 10A 3-Pin TO-252 T/R (Alt: STD11N60DM2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days | Silica - 37500 |
|
Buy Now | |
|
|
CHIPMALL.COM LIMITED | MOSFET N-CH 650V 10A DPAK | 2500 |
|
$0.8996 / $1.4918 | Buy Now |
Part Details for STD11N60DM2
STD11N60DM2 CAD Models
STD11N60DM2 Part Data Attributes
|
|
STD11N60DM2
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STD11N60DM2
STMicroelectronics
N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Manufacturer Package Code | DPAK | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 250 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.42 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 1.08 pF | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 110 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |