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Transistors / Power Field-Effect Transistors / STD10PF06
Datasheets
STD10PF06 by:
STMicroelectronics
Hongxing Electrical Ltd
STMicroelectronics
Not Found

P-Channel 60V - 0.18 Ohm - 10A STripFET(TM) II POWER MOSFET

Part Details for STD10PF06 by STMicroelectronics

Results Overview of STD10PF06 by STMicroelectronics

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

STD10PF06 Information

STD10PF06 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STD10PF06

Part # Distributor Description Stock Price Buy
DISTI # STD10PF06
Avnet Americas Trans MOSFET P-CH 60V 10A 3-Pin(2+Tab) DPAK - Rail/Tube (Alt: STD10PF06) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Tube 0
RFQ
ComSIT USA Electronic Component RoHS: Compliant Stock DE - 0
Stock ES - 1723
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for STD10PF06

STD10PF06 CAD Models

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STD10PF06 Part Data Attributes

Parametric Data
STD10PF06 STMicroelectronics
Buy Now Datasheet
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STD10PF06 STMicroelectronics P-Channel 60V - 0.18 Ohm - 10A STripFET(TM) II POWER MOSFET
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-252AA
Package Description DPAK-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 125 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 40 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STD10PF06

This table gives cross-reference parts and alternative options found for STD10PF06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD10PF06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SFR9024TF Rochester Electronics LLC Check for Price 7.8A, 60V, 0.28ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 STD10PF06 vs SFR9024TF
FQD7P06 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 STD10PF06 vs FQD7P06
RFD8P05SM9A Intersil Corporation Check for Price 8A, 50V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA STD10PF06 vs RFD8P05SM9A
SPB18P06P Infineon Technologies AG Check for Price Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN STD10PF06 vs SPB18P06P
SPB08P06P Infineon Technologies AG Check for Price Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN STD10PF06 vs SPB08P06P
SFR2955 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 7.6A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 STD10PF06 vs SFR2955
RFD8P06ESM Harris Semiconductor Check for Price Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA STD10PF06 vs RFD8P06ESM
SFW9Z14 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET STD10PF06 vs SFW9Z14
RFD8P05SM9A Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA VARIANT, 3 PIN STD10PF06 vs RFD8P05SM9A
RFD8P05SM9A Harris Semiconductor Check for Price Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA STD10PF06 vs RFD8P05SM9A

STD10PF06 Related Parts

STD10PF06 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for STD10PF06 is -40°C to 125°C.

  • To ensure ESD protection, handle STD10PF06 devices in an ESD-protected environment, use ESD-protected workbenches, and wear ESD-protective wrist straps or clothing.

  • The recommended storage temperature for STD10PF06 is -40°C to 30°C, with a relative humidity of 60% or less.

  • Yes, STD10PF06 is suitable for high-reliability applications, such as automotive, industrial, and aerospace, due to its high-quality manufacturing process and rigorous testing.

  • The maximum current rating for STD10PF06 depends on the package type and operating conditions. Refer to the datasheet for specific current ratings and derating curves.