| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
STD10PF06
|
Avnet Americas | Trans MOSFET P-CH 60V 10A 3-Pin(2+Tab) DPAK - Rail/Tube (Alt: STD10PF06) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Tube | 0 |
|
RFQ |
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
STMICROELECTRONICS
|
|
Part Package Code
|
TO-252AA
|
|
Package Description
|
DPAK-3
|
|
Pin Count
|
3
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
Samacsys Manufacturer
|
STMicroelectronics
|
|
Avalanche Energy Rating (Eas)
|
125 mJ
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
60 V
|
|
Drain Current-Max (ID)
|
10 A
|
|
Drain-source On Resistance-Max
|
0.2 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
TO-252AA
|
|
JESD-30 Code
|
R-PSSO-G2
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
2
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
175 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE
|
|
Polarity/Channel Type
|
P-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
40 W
|
|
Pulsed Drain Current-Max (IDM)
|
40 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
MATTE TIN
|
|
Terminal Form
|
GULL WING
|
|
Terminal Position
|
SINGLE
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RFD8P06ESM | Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Fairchild Semiconductor Corporation | STD10PF06 vs RFD8P06ESM |
| FQD7P06TM | Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | STD10PF06 vs FQD7P06TM |
| SPD08P05 | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Siemens | STD10PF06 vs SPD08P05 |
| RFD8P06ESM | 8A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | STD10PF06 vs RFD8P06ESM |
| FQD7P06 | Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | STD10PF06 vs FQD7P06 |
| SFW9Z14 | Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | STD10PF06 vs SFW9Z14 |
| SFR2955 | Power Field-Effect Transistor, 7.6A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Samsung Semiconductor | STD10PF06 vs SFR2955 |
| RF1S9640SM | 11A, 200V, 0.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN | Rochester Electronics LLC | STD10PF06 vs RF1S9640SM |
| SSR2955 | Power Field-Effect Transistor, 12A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | STD10PF06 vs SSR2955 |
| RFD8P05SM | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Fairchild Semiconductor Corporation | STD10PF06 vs RFD8P05SM |