Part Details for STB80NF55L-08T4 by STMicroelectronics
Overview of STB80NF55L-08T4 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| 20021311-00008T4LF | Amphenol Communications Solutions | 1.27mm (0.05in.) pitch, Receptacle Top entry, 8 contacts | |
| 20021444-00008T4LF | Amphenol Communications Solutions | Minitek127®, Wire to Board connector, IDC Receptacle, Double Row, 8 Positions, 1.27 mm (.050in) * 1.27 mm (.050in) Pitch. | |
| 20021511-00008T4LF | Amphenol Communications Solutions | Minitek127®, Board/Wire to Board connector, Shrouded Vertical Header, Through Hole, Double Row, 8 Positions, 1.27 mm (.050in) Pitch * 1.27 mm (.050in) Pitch. |
Part Details for STB80NF55L-08T4
STB80NF55L-08T4 CAD Models
STB80NF55L-08T4 Part Data Attributes
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STB80NF55L-08T4
STMicroelectronics
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Datasheet
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STB80NF55L-08T4
STMicroelectronics
80A, 55V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 870 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.01 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STB80NF55L-08T4
This table gives cross-reference parts and alternative options found for STB80NF55L-08T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB80NF55L-08T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB80N06S2LH5ATMA1 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STB80NF55L-08T4 vs IPB80N06S2LH5ATMA1 |
| STP4NK60Z | N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220 package | STMicroelectronics | STB80NF55L-08T4 vs STP4NK60Z |
| FQA30N40 | Power Field-Effect Transistor, 30A I(D), 400V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | STB80NF55L-08T4 vs FQA30N40 |
| FQA17N40 | Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN | Fairchild Semiconductor Corporation | STB80NF55L-08T4 vs FQA17N40 |
| SSS7N60B | Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | STB80NF55L-08T4 vs SSS7N60B |
| FDP6035L | Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | STB80NF55L-08T4 vs FDP6035L |
| BUK465-60A | 41A, 60V, 0.038ohm, N-CHANNEL, Si, POWER, MOSFET | NXP Semiconductors | STB80NF55L-08T4 vs BUK465-60A |
| IXFH68N20 | Power Field-Effect Transistor, 68A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, | IXYS Corporation | STB80NF55L-08T4 vs IXFH68N20 |
| STD7NK30Z | 5A, 300V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, ROHS COMPLIANT, DPAK-3 | STMicroelectronics | STB80NF55L-08T4 vs STD7NK30Z |
| SPA16N50C3 | Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN | Infineon Technologies AG | STB80NF55L-08T4 vs SPA16N50C3 |