Part Details for STB6NM60N by STMicroelectronics
Overview of STB6NM60N by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for STB6NM60N
STB6NM60N CAD Models
STB6NM60N Part Data Attributes:
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STB6NM60N
STMicroelectronics
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Datasheet
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STB6NM60N
STMicroelectronics
4.6A, 600V, 0.92ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | D2PAK | |
| Package Description | ROHS COMPLIANT, TO-263, D2PAK-3 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE ENERGY RATED | |
| Avalanche Energy Rating (Eas) | 65 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 4.6 A | |
| Drain-source On Resistance-Max | 0.92 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 45 W | |
| Pulsed Drain Current-Max (IDM) | 18.4 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STB6NM60N
This table gives cross-reference parts and alternative options found for STB6NM60N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB6NM60N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SPP80N03S2L-05 | Power Field-Effect Transistor, 80A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STB6NM60N vs SPP80N03S2L-05 |
| NDP7050L | Power Field-Effect Transistor, 75A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | STB6NM60N vs NDP7050L |
| SSH60N08 | Power Field-Effect Transistor, 60A I(D), 80V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | STB6NM60N vs SSH60N08 |
| FQP6N50 | Power Field-Effect Transistor, 5.5A I(D), 500V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | STB6NM60N vs FQP6N50 |
| STW13NK80Z | 12A, 800V, 0.65ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 | STMicroelectronics | STB6NM60N vs STW13NK80Z |
| STB24NM65N | N-channel 650 V - 0.16 Y - 19 A - TO-220/FP - D2/I2PAK - TO-247 second generation MDmesh™ Power MOSFET | STMicroelectronics | STB6NM60N vs STB24NM65N |
| NDB705BE | 70A, 50V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Texas Instruments | STB6NM60N vs NDB705BE |
| SSH70N10 | Power Field-Effect Transistor, 70A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | STB6NM60N vs SSH70N10 |
| NDB706AL | TRANSISTOR 75 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power | National Semiconductor Corporation | STB6NM60N vs NDB706AL |
| STB80NF55L-08T4 | 80A, 55V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | STMicroelectronics | STB6NM60N vs STB80NF55L-08T4 |