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Transistors / Power Field-Effect Transistors / STB6N80K5
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STB6N80K5 by: STMicroelectronics

N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in a D2PAK package

Part Details for STB6N80K5 by STMicroelectronics

Overview of STB6N80K5 by STMicroelectronics

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Price & Stock for STB6N80K5

Part # Distributor Description Stock Price Buy
DISTI # 69AH2679
Newark Mosfet, N-Ch, 800V, 4.5A, 150Deg C, 85W Rohs Compliant: Yes |Stmicroelectronics STB6N80K5 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 325
  • 1 $2.3800
  • 10 $2.0100
  • 25 $1.8800
  • 50 $1.7600
  • 100 $1.6300
  • 250 $1.5200
  • 500 $1.4100
$1.4100 / $2.3800 Buy Now
DISTI # 497-14974-1-ND
DigiKey MOSFET N-CH 800V 4.5A D2PAK Min Qty: 1 Lead time: 14 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) Temporarily Out of Stock
  • 1 $2.0100
  • 10 $1.6650
  • 100 $1.3255
  • 500 $1.1216
  • 1,000 $0.9516
  • 2,000 $0.9040
  • 5,000 $0.8700
  • 10,000 $0.8413
$0.8413 / $2.0100 Buy Now
DISTI # STB6N80K5
Avnet Americas Trans MOSFET N-CH 800V 4.5A 3-Pin D2PAK T/R - Tape and Reel (Alt: STB6N80K5) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Reel 0
  • 1,000 $0.9994
  • 2,000 $0.9792
  • 4,000 $0.9590
  • 6,000 $0.9388
  • 8,000 $0.9186
  • 10,000 $0.8985
  • 100,000 $0.8783
$0.8783 / $0.9994 Buy Now
DISTI # 511-STB6N80K5
Mouser Electronics MOSFET N-channel 800 V, 1.3 Ohm typ 4.5 A MDmesh K5 Power MOSFET RoHS: Compliant 1007
  • 1 $2.0100
  • 10 $1.6700
  • 100 $1.3300
  • 250 $1.2300
  • 500 $1.1200
  • 1,000 $0.9350
  • 2,000 $0.9030
  • 5,000 $0.8690
$0.8690 / $2.0100 Buy Now
STMicroelectronics N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in a D2PAK package RoHS: Compliant Min Qty: 1 1007
  • 1 $1.9700
  • 10 $1.6400
  • 100 $1.3000
  • 250 $1.2100
  • 500 $1.1000
$1.1000 / $1.9700 Buy Now
Future Electronics N-Channel 800 V 4.5 A 1. 6 mOhm Surface Mount SuperMESH™ K5 Mosfet - D2Pak RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Cut Tape/Mini-Reel 0
Cut Tape/Mini-Reel
  • 1 $1.1600
  • 10 $1.0500
  • 40 $0.9800
  • 150 $0.9250
  • 500 $0.8500
$0.8500 / $1.1600 Buy Now
Future Electronics N-Channel 800 V 4.5 A 1. 6 mOhm Surface Mount SuperMESH™ K5 Mosfet - D2Pak RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
Reel
  • 1,000 $0.9200
  • 2,000 $0.9000
  • 3,000 $0.8850
  • 4,000 $0.8800
  • 5,000 $0.8500
$0.8500 / $0.9200 Buy Now
Future Electronics N-Channel 800 V 4.5 A 1. 6 mOhm Surface Mount SuperMESH™ K5 Mosfet - D2Pak RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
Reel
  • 1,000 $0.9200
  • 2,000 $0.9000
  • 3,000 $0.8850
  • 4,000 $0.8800
  • 5,000 $0.8500
$0.8500 / $0.9200 Buy Now
Future Electronics N-Channel 800 V 4.5 A 1. 6 mOhm Surface Mount SuperMESH™ K5 Mosfet - D2Pak RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Cut Tape/Mini-Reel 0
Cut Tape/Mini-Reel
  • 1 $1.1600
  • 10 $1.0500
  • 40 $0.9800
  • 150 $0.9250
  • 500 $0.8500
$0.8500 / $1.1600 Buy Now
Ameya Holding Limited N-Channel 800 V 4.5 A 1. 6 mOhm Surface Mount SuperMESH™ K5 Mosfet - D2Pak 1332
RFQ
DISTI # STB6N80K5
Avnet Silica Trans MOSFET N-CH 800V 4.5A 3-Pin D2PAK T/R (Alt: STB6N80K5) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Silica - 0
Buy Now
DISTI # STB6N80K5
EBV Elektronik Trans MOSFET N-CH 800V 4.5A 3-Pin D2PAK T/R (Alt: STB6N80K5) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days EBV - 1000
Buy Now

Part Details for STB6N80K5

STB6N80K5 CAD Models

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STB6N80K5 Part Data Attributes:

Parametric Data
STB6N80K5 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STB6N80K5 STMicroelectronics N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in a D2PAK package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Package Description ROHS COMPLIANT, D2PAK-3/2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 85 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 4.5 A
Drain-source On Resistance-Max 1.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 18 A
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STB6N80K5

This table gives cross-reference parts and alternative options found for STB6N80K5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB6N80K5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
STI6N80K5 N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in an I2PAK package STMicroelectronics STB6N80K5 vs STI6N80K5

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